FET DFN2X2 involucrum singulare P alvei 20V-40V exemplar Ordinationis_WINSOK MOSFET

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FET DFN2X2 involucrum singulare P alvei 20V-40V exemplar Ordinationis_WINSOK MOSFET

WINSOK MOSFETinvolucrum DFN2X2-6L, unius canali P-FET, intentionis 20V-40V exempla sic compendiantur:

1. Exemplar: WSD8823DN22 singularis canalis P -20V -3.4A, resistentia interna 60mΩ

Exemplaria correspondentes:

AOS:AON2403

DE Semiconductor: FDMA908PZ

Nxperian: PMPB15XP

TOSHIBA:SSM6J512NU

2. Modus: WSD4018DN22 unicus canalis P, -40V-18A, resistentia interna 26mΩ

3. Exemplar: WSD2065DN22 duplex P-alveus, -20V-3.5A, resistentia interna 60 mΩ

Applicatio missionum: e-cigarette MOSFET,wireless praecipiensMOSFET,currus stultumMOSFET, controller MOSFET, digital product MOSFET, parva familia adjumenta MOSFET, dolor electronics MOSFET


Post tempus: Nov-06-2023