WINSOK MOSFETinvolucrum DFN2X2-6L, unius canali P-FET, intentionis 20V-40V exempla sic compendiantur:
1. Exemplar: WSD8823DN22 singularis canalis P -20V -3.4A, resistentia interna 60mΩ
Exemplaria correspondentes:
AOS:AON2403
DE Semiconductor: FDMA908PZ
Nxperian: PMPB15XP
TOSHIBA:SSM6J512NU
2. Modus: WSD4018DN22 unicus canalis P, -40V-18A, resistentia interna 26mΩ
3. Exemplar: WSD2065DN22 duplex P-alveus, -20V-3.5A, resistentia interna 60 mΩ
Applicatio missionum: e-cigarette MOSFET,wireless praecipiensMOSFET,currus stultumMOSFET, controller MOSFET, digital product MOSFET, parva familia adjumenta MOSFET, dolor electronics MOSFET
Post tempus: Nov-06-2023