WST8205 Dual N-Channel 20V 5.8A SOT-236L WINSOK MOSFET

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WST8205 Dual N-Channel 20V 5.8A SOT-236L WINSOK MOSFET

brevis descriptio:


  • Exemplar Number:WST8205
  • BVDSS:20V
  • RDSON:24mΩ
  • ID:5.8A
  • Channel:Dual N-Channel
  • Sarcina:SOT-236L
  • Breviarium productum:WST8205 MOSFET ad 20 voltas operatur, 5.8 amps currentis sustinet et resistentiam habet 24 millium millium. MOSFET in Dual N-Channel consistit et in SOT-236L involucro continetur.
  • Applicationes:Automotive electronics, DUCTUS lumina, audio, digitales, parvas familias adjumenta, electronicas consumptores, tabulas tutelares.
  • Product Detail

    Applicationem

    Product Tags

    General Description

    WST8205 est fossam altam perficiendi N-Ch MOSFET cum densitate cellularum altissimarum, praestantissimum RDSON et portae crimen ob parvas potentias commutationes et onera applicationum commutationes praestantium. WST8205 occurrit RoHS et Viridis Product requisita cum plena probatione utilitatis commendatio.

    Features

    Nostra technologia provecta incorporat notas novas quae hanc machinam ab aliis in foro separant. Cum fossae densitatis cellulae altae, haec technica maiora facit integrationem partium, ducens ad augendam observantiam et efficientiam. Nota utilitas huius artificii est eius portae vilissimae crimen. Quam ob rem, minimam vim requirit ut inter suos interdum civitates mutandae, inde in reducta potentia consummatio et altiore efficientia melioratur. Haec proprietas humilis portae crimen efficit ut specimen electionis applicationum quae altam celeritatem mutandi et subtilis temperantiae exigunt. Adde, ratio nostra excellit in effectibus reducendis Cdv/dt. Cdv/dt, vel aestimatio mutationis intentionis exhaurientis ad fontem super tempus, effectus commodi causare potest ut spicularum voltage et impedimentum electromagneticum. His effectibus efficaciter extenuando, machina nostra certam ac stabilem operationem efficit, etiam in postulandis ac dynamicis ambitibus. Praeter technicam virtutem, haec machina etiam environmentally- amica est. Disponitur cum sustineri in mente, habita ratione factorum ut potentia efficientiae et longivitatis. In summa industria efficientiam operando, haec machina eius carbonis vestigium minuit et ad viridiorem futurum confert. In summa, nostra fabrica technologiam cum densitate cellularum altarum, fossarum cellularum densitatis, ostiolum humillimum praefectum, et effectibus Cdv/dt optimam reductionem coniungit. Cum suo ambitu amicabili consilio, non solum superiorem observantiam et efficaciam tradit, sed etiam adsimilat necessitatem crescentem solutionum sustinebilium in mundo hodierno.

    Applications

    High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System, Automotive electronics, DUXERIT luminaria, audio, digitales, parvas familias adjumenta, electronicas consumptores, tabulas tutelares.

    numero materiae correspondentes

    AOS AO6804A,NXP PMDT290UNE,PANJIT PJS6816,Sinopower SM2630DSC,dintek DTS5440,DTS8205,DTS5440,DTS8205,RU8205C6.

    Magna parametri

    Symbolum Parameter Rating Unitates
    VDS Exhaurire-Source Voltage 20 V
    VGS Porta-Source Voltage ±12 V
    ID@Tc=25℃ Continua Exhaurire Current, VGS @ 4.5V1 5.8 A
    ID@Tc=70℃ Continua Exhaurire Current, VGS @ 4.5V1 3.8 A
    IDM Exhaurire Pulsed Current2 16 A
    PD@TA=25℃ Totalis potentiae dissipatio3 2.1 W
    TSTG Repono Temperature Range -55 ad 150
    TJ Temperature Range Junction operating -55 ad 150
    Symbolum Parameter Conditiones Min. Typ. Maximilianus. Unitas
    BVDSS Exhaurire-Source Naufragii Voltage VGS=0V , ID=250uA 20 --- --- V
    BVDSS/△TJ BVDSS Temperature Coefficient Ad 25℃, ID = 1mA --- 0.022 --- V/℃
    RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=5.5A --- 24 28
           
        VGS=2.5V , ID=3.5A --- 30 45  
    VGS(th) Limen Voltage VGS=VDS , ID = 250uA 0.5 0.7 1.2 V
               
    △VGS (th) VGS(th) Temperature Coefficient   --- -2.33 --- mV/℃
    IDSS Exhaurire-Fource Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA
           
        VDS=16V , VGS=0V , TJ=55℃ --- --- 5  
    IGSS Porta-Source ultrices Current VGS=±12V VDS=0V --- --- ±100 nA
    gfs * Transconductance transmittere VDS=5V , ID=5A --- 25 --- S
    Rg Porta Resistentia VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω
    Qg Totalis Porta Praecipe (4.5V) VDS=10V, VGS=4.5V, ID=5.5A --- 8.3 11.9 nC
    Qgs Porta-Source Charge --- 1.4 2.0
    Qgd Porta-Exhaurire præcipe --- 2.2 3.2
    Td (on) Turn-De mora Tempus VDD=10V , VGEN=4.5V , RG=6Ω

    ID=5A, RL=10Ω

    --- 5.7 11.6 ns
    Tr Surge Tempus --- 34 63
    Td (off) Turn-Off mora Tempus --- 22 46
    Tf Fall Tempus --- 9.0 18.4
    Ciss Input Capacitance VDS=10V , VGS=0V , f=1MHz --- 625 889 pF
    Coss Output Capacitance --- 69 98
    Crss Reverse Transfer Capacitance --- 61 88

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