WST4041 P-Channel -40V -6A SOT-23-3L WINSOK MOSFET

Description:

Exemplar Number:WST4041

BVDSS:-40V

RDSON:30mΩ

ID:-6A

Channel:P-Channel

Sarcina:SOT-2-3L

Breviarium productum:WST4041 MOSFET intentionem habet -40V, currentis -6A, resistentiae 30mΩ, P-Channel, et SOT-23-3L fasciculorum.

Applicationes:Electronic cigarettes, moderatores, productos digitales, parva auxilia, electronicarum consumptores.

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Product Detail

Applicationem

Product Tags

Communia

WST4041 potens est P-fluvii MOSFET ad usum in convertentium hircorum synchronum destinatum.Habet cellam altam densitatem quae pro excellenti RDSON et portae custodia concedit.The WST4041 occurrit requisitis pro RoHS et Green Productis signis, et venit cum 100% EAS cautione pro certa observantia.

Features

Technologiae fossae provectae lineamenta cellae altae densitatis et super portae humilis crimen, signanter minuentes effectum CdV/dt.Nostrae cogitationes cum 100% EAS spondere et optiones environmentally- amicabiliter venire.

Applications

Summus frequentia punctum-of-load synchronum hircum convertentem, retis DC-DC potentiae systematis, onus switch, e-cigarettes, moderatoris, digitales machinis, parvas domus adjumenta, et electronicas consumendi.

numero materiae correspondentes

AOS AO3409 AOS3403 AOS3421 AOS3421E AO3401 AOS3401A, dintek DTS4501, ncepower NCE40P05Y,

Magna parametri

Symbolum	Parameter	Rating	Unitates
VDS	Exhaurire-Source Voltage	-40	V
VGS	Porta-Source Voltage	±20	V
ID@TC=25℃	Continua Exhaurire Current, VGS @ -10V1	-6.0	A
ID@TC=100℃	Continua Exhaurire Current, VGS @ -10V1	-4.5	A
IDM	Exhaurire Pulsed Current2	-24	A
EAS	Unum pulsum NIVIS Energy3	12	mJ
IAS	NIVIS CASUS Current	-7	A
PD@TC=25℃	Totalis potentiae Dissipation4	1.4	W
TSTG	Repono Temperature Range	-55 ad 150	℃
TJ	Temperature Range Junction operating	-55 ad 150	℃

Symbolum	Parameter	Conditiones	Min.	Typ.	Maximilianus.	Unitas
BVDSS	Exhaurire-Source Naufragii Voltage	VGS=0V , ID=-250uA	-40	---	---	V
BVDSS/△TJ	BVDSS Temperature Coefficient	Ad 25℃, ID = -1mA	---	-0.03	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-10V , ID=-3A	---	30	40	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID= -1A	---	40	58	mΩ
VGS(th)	Limen Voltage	VGS=VDS , ID = -250uA	-0.8	-1.2	-2.2	V
△VGS (th)	VGS(th) Temperature Coefficient	VGS=VDS , ID = -250uA	---	4.56	---	mV/℃
IDSS	Exhaurire-Fource Leakage Current	VDS=-28V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Exhaurire-Fource Leakage Current	VDS=-28V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Porta-Source ultrices Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs *	Transconductance transmittere	VDS=-5V, ID=-3A	---	15	---	S
Rg	Porta Resistentia	VDS=0V , VGS=0V , f=1MHz	---	3.8	---	Ω
Qg	Totalis portae incurrens (-4.5V)	VDS=-18V , VGS=-10V , ID=4A	---	9.5	---	nC
Qgs	Porta-Source Charge		---	1.7	---
Qgd	Porta-Exhaurire præcipe		---	2.0	---
Td (on)	Turn-De mora Tempus	VDD=-15V , VGS=-10V , RG=6Ω, ID=1A, RL=15Ω	---	8	---	ns
Tr	Surge Tempus		---	10	---
Td (off)	Turn-Off mora Tempus		---	18	---
Tf	Fall Tempus		---	8	---
Ciss	Input Capacitance	VDS=-15V , VGS=0V , f=1MHz	---	420	---	pF
Coss	Output Capacitance		---	77	---
Crss	Reverse Transfer Capacitance		---	55	---