WST2078 N&P Channel 20V/-20V 3.8A/-4.5A SOT-236L WINSOK MOSFET

brevis descriptio:

Exemplar Number:WST2078

BVDSS:20V/-20V

RDSON:45mΩ/65mΩ

ID:3.8A/-4.5A

Channel:N&P Channel

Sarcina:SOT-236L

Breviarium productum:WST2078 MOSFET in intentione aestimationes 20V et -20V habet. Excursus 3.8A et -4.5A tractare potest, et valores 45mΩ et 65mΩ resistere habet. MOSFET et N&P facultates habet et in sarcina SOT-236L venit.

Applicationes:E-cigarettes, moderatores, productos digitales, adjumenta, ac electronicas consumere.

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Product Detail

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General Description

WST2078 est optimum MOSFET pro parva potentia virgas et onera applicationes. Habet cellam altam densitatem quae optimum RDSON et portae crimen praebet. Occurrit RoHS et Productus Green requisitis et ad plenam functionem constantiam probatus est.

Features

Provectus technologiae cum fossae cellae densitatis altae, crimen portae perquam humile, et effectibus Cdv/dt excellentibus reductione. Quae res etiam environmentally- amica est.

Applications

Summus frequentia punctum-of-onere synchronum parva potentia mutandi perfecta est ad usum in MB/NB/UMPC/VGA, networking DC-DC systemata potentiae, virgas onus, e-cigarettes, moderatores, productos digitales, parvas familias adjumenta, ac perussi electronics.

numero materiae correspondentes

AOS AO6604 AO6608, VISHAY Si3585CDV,PANJIT PJS6601.

Magna parametri

Symbolum	Parameter	Rating		Unitates
Symbolum	Parameter	N-Channel	P-Channel	Unitates
VDS	Exhaurire-Source Voltage	20	-20	V
VGS	Porta-Source Voltage	±12	±12	V
ID@Tc=25℃	Continua Exhaurire Current, VGS @ 4.5V1	3.8	-4.5	A
ID@Tc=70℃	Continua Exhaurire Current, VGS @ 4.5V1	2.8	-2.6	A
IDM	Exhaurire Pulsed Current2	20	-13	A
PD@TA=25℃	Totalis potentiae dissipatio3	1.4	1.4	W
TSTG	Repono Temperature Range	-55 ad 150	-55 ad 150	℃
TJ	Temperature Range Junction operating	-55 ad 150	-55 ad 150	℃

Symbolum	Parameter	Conditiones	Min.	Typ.	Maximilianus.	Unitas
BVDSS	Exhaurire-Source Naufragii Voltage	VGS=0V , ID=250uA	20	---	---	V
BVDSS/△TJ	BVDSS Temperature Coefficient	Ad 25℃, ID = 1mA	---	0.024	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=3A	---	45	55	mΩ
		VGS=2.5V , ID=1A	---	60	80
		VGS=1.8V , ID=1A	---	85	120
VGS(th)	Limen Voltage	VGS=VDS , ID = 250uA	0.5	0.7	1	V
△VGS (th)	VGS(th) Temperature Coefficient	VGS=VDS , ID = 250uA	---	-2.51	---	mV/℃
IDSS	Exhaurire-Fource Leakage Current	VDS=16V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Exhaurire-Fource Leakage Current	VDS=16V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Porta-Source ultrices Current	VGS=±8V , VDS=0V	---	---	±100	nA
gfs *	Transconductance transmittere	VDS=5V , ID=1A	---	8	---	S
Rg	Porta Resistentia	VDS=0V , VGS=0V , f=1MHz	---	2.5	3.5	Ω
Qg	Totalis Porta Praecipe (4.5V)	VDS=10V , VGS=10V , ID=3A	---	7.8	---	nC
Qgs	Porta-Source Charge		---	1.5	---
Qgd	Porta-Exhaurire præcipe		---	2.1	---
Td (on)	Turn-De mora Tempus	VDD=10V , VGEN=4.5V , RG=6Ω ID=3A RL=10Ω	---	2.4	4.3	ns
Tr	Surge Tempus		---	13	23
Td (off)	Turn-Off mora Tempus		---	15	28
Tf	Fall Tempus		---	3	5.5
Ciss	Input Capacitance	VDS=10V , VGS=0V , f=1MHz	---	450	---	pF
Coss	Output Capacitance		---	51	---
Crss	Reverse Transfer Capacitance		---	52	---