WST2011 Dual P-Channel -20V -3.2A SOT-236L WINSOK MOSFET
General Description
WST2011 MOSFETs in promptu sunt antecedens P-ch transistores, densitas cellae unicae plumae. Eximiam observantiam offerunt, RDSON et portae crimen humile, quod specimen faciunt parvae potentiae mutandi et applicationes switch onus. Praeterea, WST2011 signa RoHS et Producti Green obviat et se in plena functione firmitatis approbatione iactat.
Features
Provectus technologiae fossae permittit ad densitatem cellulae altioris, unde fit in fabrica viridis cum super Low porta praecipe et CdV/dt optimum effectum declinationis.
Applications
Altus frequentia punctum-of-onere synchronum parvae potentiae commutationis usui apta est in MB/NB/UMPC/VGA, DC-DC systemata potentiae networking, onus virgas, e-cigarettes, moderatores, productos digitales, parvas familias adjumenta, et electronicas consumendi. .
numero materiae correspondentes
DE FDC634P, VISHAY Si3443DDV,NXP PMDT670UPE,
Magna parametri
| Symbolum | Parameter | Rating | Unitates | |
| 10s | Stabilis publica | |||
| VDS | Exhaurire-Source Voltage | -20 | V | |
| VGS | Porta-Source Voltage | ±12 | V | |
| ID@TA=25℃ | Continua Exhaurire Current, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70℃ | Continua Exhaurire Current, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Exhaurire Pulsed Current2 | -12 | A | |
| PD@TA=25℃ | Totalis potentiae dissipatio3 | 1.7 | 1.4 | W |
| PD@TA=70℃ | Totalis potentiae dissipatio3 | 1.2 | 0.9 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ | |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ | |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = -1mA | --- | -0.011 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V , ID=-1A | --- | 95 | 115 | |||
| VGS(th) | Limen Voltage | VGS=VDS , ID = -250uA | -0.5 | -1.0 | -1.5 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | 3.95 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=-16V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-16V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±12V VDS=0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS=-5V , ID=-2A | --- | 8.5 | --- | S |
| Qg | Totalis portae incurrens (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Porta-Source Charge | --- | 1.1 | 1.7 | ||
| Qgd | Porta-Exhaurire præcipe | --- | 1.1 | 2.9 | ||
| Td (on) | Turn-De mora Tempus | VDD=-15V , VGS=-4.5V , RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Surge Tempus | --- | 9.3 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 15.4 | --- | ||
| Tf | Fall Tempus | --- | 3.6 | --- | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 750 | --- | pF |
| Coss | Output Capacitance | --- | 95 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 68 | --- |
