WSR200N08 N-fluvium 80V 200A TO-220-3L WINSOK MOSFET
General Description
WSR200N08 est summa agendi fossa N-Ch MOSFET summa cum densitate cellularum altarum, quae praestantissimum RDSON et portae crimen plerisque applicationibus synchronis cervum convertentis praebent. In WSR200N08 obviam RoHS et Producti Viridis postulationem,100% EAS plenam functionis firmitate confirmatam firmavit.
Features
Provectus altae cellae densitatis fossae technologiae, Super portae Low Praecipe, Praeclara CdV/dt effectus declinationis, 100% EAS Guarantee, Viridis Fabrica Available.
Applications
Switching application, Power Management for Inverter Systems, Electronic cigarettes, wireless charing, motors, BMS, emergency power commeatus, fuci, medical, car increpans, moderatoris, 3D impressores, productos digitales, parvas familias adjumenta, electronicas consumptores, etc.
numero materiae correspondentes
AO AOT480L, ON FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, etc.
Magna parametri
Characteres electrici (TJ=25℃, nisi aliud notentur)
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 80 | V |
| VGS | Porta-Source Voltage | ±25 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS @ 10V1 | 200 | A |
| ID@TC=100℃ | Continua Exhaurire Current, VGS @ 10V1 | 144 | A |
| IDM | Pulsus Exhaurire Current2,TC=25°C | 790 | A |
| EAS | NIVIS Energy, Singulus pulsus, L = 0.5mH | 1496 | mJ |
| IAS | Avalanche Current, Single pulsus, L = 0.5mH | 200 | A |
| PD@TC=25℃ | Totalis potentiae Dissipation4 | 345 | W |
| PD@TC=100℃ | Totalis potentiae Dissipation4 | 173 | W |
| TSTG | Repono Temperature Range | -55 ad 175 | ℃ |
| TJ | Temperature Range Junction operating | 175 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 80 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = 1mA | --- | 0.093 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V,ID=100A | --- | 2.9 | 3.5 | mΩ |
| VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | -5.5 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=80V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Porta-Source ultrices Current | VGS=±25V VDS=0V | --- | --- | ±100 | nA |
| Rg | Porta Resistentia | VDS=0V , VGS=0V , f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Totalis Porta præcipe (10V) | VDS=80V , VGS=10V , ID=30A | --- | 197 | --- | nC |
| Qgs | Porta-Source Charge | --- | 31 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 75 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=50V , VGS=10V , RG=3Ω, ID=30A | --- | 28 | --- | ns |
| Tr | Surge Tempus | --- | 18 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 42 | --- | ||
| Tf | Fall Tempus | --- | 54 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 8154 | --- | pF |
| Coss | Output Capacitance | --- | 1029 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 650 | --- |
