WSR140N12 N-fluvium 120V 140A TO-220-3L WINSOK MOSFET

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WSR140N12 N-fluvium 120V 140A TO-220-3L WINSOK MOSFET

brevis descriptio:


  • Exemplar Number:WSR140N12
  • BVDSS:120V
  • RDSON:5mΩ
  • ID:140A
  • Channel:N-cannel
  • Sarcina:TO-220-3L
  • Breviarium productum:Voltatio WSR140N12 MOSFET est 120V, vena est 140A, resistentia est 5mΩ, alveus est N-alveus, sarcina TO-220-3L est.
  • Applicationes:Virtutis copia, medicinae, majoris adjumenta, BMS etc.
  • Product Detail

    Applicationem

    Product Tags

    General Description

    WSR140N12 est fossa summa perficiendi N-ch MOSFET summa cum densitate cellularum altarum, quae praestantissimum RDSON et portae crimen plerisque applicationibus synchronis hirci convertentis. The WSR140N12 obviam RoHS et Producti Viridis postulationem, 100% EAS cum plena functione certa probata praestatur.

    Features

    Provectus altam cellam densitatis fossae technologiae, Super portae Low Praecipe, Praeclara CdV/dt effectus declinationis, 100% EAS Guarantee, Viridis Fabrica Available.

    Applications

    High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Power supply, medical, major adjumenta, BMS etc.

    numero materiae correspondentes

    ST STP40NF12 etc.

    Magna parametri

    Symbolum Parameter Rating Unitates
    VDS Exhaurire-Source Voltage 120 V
    VGS Porta-Source Voltage ±20 V
    ID Continua Dracula Current, VGS @ 10V(TC=25℃) 140 A
    IDM Exhaurire Current Pulsed 330 A
    EAS Unum pulsum NIVIS Energy 400 mJ
    PD Totalis potentiae dissipatio... C=25℃) 192 W
    RθJA Resistentia scelerisque, junctura-ambient 62 /W
    RθJC Scelerisque resistentia, junctura-case 0.65 /W
    TSTG Repono Temperature Range -55 ad 150
    TJ Temperature Range Junction operating -55 ad 150
    Symbolum Parameter Conditiones Min. Typ. Maximilianus. Unitas
    BVDSS Exhaurire-Source Naufragii Voltage VGS=0V , ID=250uA 120 --- --- V
    RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 5.0 6.5
    VGS(th) Limen Voltage VGS=VDS , ID = 250uA 2.0 --- 4.0 V
    IDSS Exhaurire-Fource Leakage Current VDS=120V , VGS=0V , TJ=25℃ --- --- 1 uA
    IGSS Porta-Source ultrices Current VGS=±20V , VDS=0V --- --- ±100 nA
    Qg Totalis porta præcipe VDS=50V , VGS=10V , ID=15A --- 68.9 --- nC
    Qgs Porta-Source Charge --- 18.1 ---
    Qgd Porta-Exhaurire præcipe --- 15.9 ---
    Td (on) Turn-De mora Tempus VDD=50V, VGS=10VRG=2Ω,ID=25A --- 30.3 --- ns
    Tr Surge Tempus --- 33.0 ---
    Td (off) Turn-Off mora Tempus --- 59.5 ---
    Tf Fall Tempus --- 11.7 ---
    Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 5823 --- pF
    Coss Output Capacitance --- 778.3 ---
    Crss Reverse Transfer Capacitance --- 17.5 ---

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