WSR140N12 N-fluvium 120V 140A TO-220-3L WINSOK MOSFET

Description:

Exemplar Number:WSR140N12

BVDSS:120V

RDSON:5mΩ

ID:140A

Channel:N-cannel

Sarcina:TO-220-3L

Breviarium productum:Voltatio WSR140N12 MOSFET est 120V, vena est 140A, resistentia est 5mΩ, alveus est N-venalis, sarcina TO-220-3L est.

Applicationes:Virtutis copia, medicinae, majoris adjumenta, BMS etc.

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Product Detail

Applicationem

Product Tags

Communia

WSR140N12 est fossa summa perficiendi N-ch MOSFET summa cum densitate cellularum altarum, quae praestantissimum RDSON et portae crimen plerisque applicationibus synchronis cervum convertentis praebent.The WSR140N12 obviam RoHS et Producti Viridis postulationem, 100% EAS cum plena functione certa probata praestatur.

Features

Provectus altam cellam densitatis fossae technologiae, Super portae Low Praecipe, Praeclara CdV/dt effectus declinationis, 100% EAS Guarantee, Viridis Fabrica Available.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Power supply, medical, major adjumenta, BMS etc.

numero materiae correspondentes

ST STP40NF12 etc.

Magna parametri

Symbolum	Parameter	Rating	Unitates
VDS	Exhaurire-Source Voltage	120	V
VGS	Porta-Source Voltage	±20	V
ID	Continua Dracula Current, VGS @ 10V(TC=25℃)	140	A
IDM	Exhaurire Current Pulsed	330	A
EAS	Unum pulsum NIVIS Energy	400	mJ
PD	Totalis potentiae dissipatio... C=25℃)	192	W
RθJA	Scelerisque resistentia, junctura-ambient	62	/W
RθJC	Scelerisque resistentia, junctura-case	0.65	/W
TSTG	Repono Temperature Range	-55 ad 150	℃
TJ	Temperature Range Junction operating	-55 ad 150	℃

Symbolum	Parameter	Conditiones	Min.	Typ.	Maximilianus.	Unitas
BVDSS	Exhaurire-Source Naufragii Voltage	VGS=0V , ID=250uA	120	---	---	V
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=30A	---	5.0	6.5	mΩ
VGS(th)	Limen Voltage	VGS=VDS , ID = 250uA	2.0	---	4.0	V
IDSS	Exhaurire-Fource Leakage Current	VDS=120V , VGS=0V , TJ=25℃	---	---	1	uA
IGSS	Porta-Source ultrices Current	VGS=±20V , VDS=0V	---	---	±100	nA
Qg	Totalis porta præcipe	VDS=50V , VGS=10V , ID=15A	---	68.9	---	nC
Qgs	Porta-Source Charge		---	18.1	---
Qgd	Porta-Exhaurire præcipe		---	15.9	---
Td (on)	Turn-De mora Tempus	VDD=50V, VGS=10VRG=2Ω,ID=25A	---	30.3	---	ns
Tr	Surge Tempus		---	33.0	---
Td (off)	Turn-Off mora Tempus		---	59.5	---
Tf	Fall Tempus		---	11.7	---
Ciss	Input Capacitance	VDS=50V , VGS=0V , f=1MHz	---	5823	---	pF
Coss	Output Capacitance		---	778.3	---
Crss	Reverse Transfer Capacitance		---	17.5	---