WSP6067A N&P-Channel 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET
Communia
WSP6067A MOSFETs sunt antecedens ad fossam P-ch technologiam cum densitate altissima cellularum.Praeclaram observantiam tradent in terminis utriusque RDSON et portae praecepti, convenientibus conversionibus maxime synchronis hircum.Hae MOSFETs concurrunt RoHS et Product criteriis cum 100% EAS plenam fidem praestantes functionis.
Features
Provecta technicae densitatis cellulae fossae formationis altae dat, quae fit in super depressione portae inferioris et effectus corruptionis superioris CdV/dt.Nostrae cogitationes cum 100% EAS warantum venient et environmentally- amicae sunt.
Applications
High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, wireless charge, motors, fuci, medical equipment, currus dextrarii, moderatoris, machinae electronicae, parvae domus adjumenta, et electronicarum consumere .
numero materiae correspondentes
AOS
Magna parametri
| Symbolum | Parameter | Rating | Unitates | |
| N-Channel | P-Channel | |||
| VDS | Exhaurire-Source Voltage | 60 | -60 | V |
| VGS | Porta-Source Voltage | ±20 | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS @ 10V1 | 7.0 | -5.0 | A |
| ID@TC=100℃ | Continua Exhaurire Current, VGS @ 10V1 | 4.0 | -2.5 | A |
| IDM | Exhaurire Pulsed Current2 | 28 | -20 | A |
| EAS | Unum pulsum NIVIS Energy3 | 22 | 28 | mJ |
| IAS | NIVIS CASUS Current | 21 | -24 | A |
| PD@TC=25℃ | Totalis potentiae Dissipation4 | 2.0 | 2.0 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = 1mA | --- | 0.093 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=5A | --- | 38 | 52 | mΩ |
| VGS=4.5V , ID=4A | --- | 55 | 75 | |||
| VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 1 | 2 | 3 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | 5.24 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS=5V , ID=4A | --- | 28 | --- | S |
| Rg | Porta Resistentia | VDS=0V , VGS=0V , f=1MHz | --- | 2.8 | 4.3 | Ω |
| Qg | Totalis Porta Praecipe (4.5V) | VDS=48V , VGS=4.5V , ID=4A | --- | 19 | 25 | nC |
| Qgs | Porta-Source Charge | --- | 2.6 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 4.1 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=30V , VGS=10V , RG=3.3Ω, ID=1A | --- | 3 | --- | ns |
| Tr | Surge Tempus | --- | 34 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 23 | --- | ||
| Tf | Fall Tempus | --- | 6 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 1027 | --- | pF |
| Coss | Output Capacitance | --- | 65 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 45 | --- |
