WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET
General Description
WSP4888 summus est transistor cum densa structura cellularum faciendo, specimen usui in converters synchronos hirci. Egregiis RDSON et portarum criminibus gloriatur, summo studio ad has applicationes facit. Accedit, quod WSP4888 utrumque RoHS et Productum Green postulationem occurrit et cum cautione 100% EAS pro certo munere venit.
Features
Technologiae fossae provectae lineamenta cellae altae densitatis et super portae humilis crimen, signanter minuentes effectum CdV/dt. Nostrae cogitationes veniunt cum 100% EAS cautione et in environmentally- amica bene.
Nostri MOSFETs qualitatem strictam moderantes subeunt mensuras ut signa summae industriae occurrant. Quaelibet unitas perspectissima est ad perficiendum, durabilitatem et constantiam, ad vitam longam producendam. Asperum consilium suum efficit ut extremas condiciones operandi sustineat, instrumentorum functionis continuum procurans.
Aliquam cursus sapien: Quamvis superiores qualitates nostri MOSFETs valde certatim precii sunt, et compendia significantes sine detrimento effectus comparant. Credimus omnes perussores accessum ad qualitatem productorum habere debere, et nostrum pretium consilii huius obligationis reflectere.
Lata compatibilitas: MOSFETs nostri cum variis systematibus electronicis compatiuntur, easque versatilem electionem fabricantium et finis utentium facit. Incommode in systemata exsistentia integrat, ut altiore effectus perficiat, non maioris consilii modificationes requirat.
Applications
High Frequency Point-of-Load Synchronous Buck Converter for use in MB/NB/UMPC/VGA systems, Networking DC-DC Power Systems, Load Switches, E-cigarettes, Wireless scuters, Motors, Fuci, Medical equipment, Car Chargers, Controllerers , Digital Products, Parva Domus Adjumenta, et Consumer Electronics.
numero materiae correspondentes
AOS AO4832 AO4838 AO4914, ON NTMS4916N, VISHAY Si4128DY, INFINEON BSO150N03MD G,Sinopower SM4803DSK,dintek DTM4926 DTM4936, ruichips RU30D10H
Magna parametri
Symbolum | Parameter | Rating | Unitates |
VDS | Exhaurire-Source Voltage | 30 | V |
VGS | Porta-Source Voltage | ±20 | V |
ID@TC=25℃ | Continua Exhaurire Current, VGS @ 10V1 | 9.8 | A |
ID@TC=70℃ | Continua Exhaurire Current, VGS @ 10V1 | 8.0 | A |
IDM | Exhaurire Pulsed Current2 | 45 | A |
EAS | Unum pulsum NIVIS Energy3 | 25 | mJ |
IAS | NIVIS CASUS Current | 12 | A |
PD@TA=25℃ | Totalis potentiae Dissipation4 | 2.0 | W |
TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = 1mA | --- | 0.093 | --- | V/℃ |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=8.5A | --- | 13.5 | 18 | mΩ |
VGS=4.5V , ID=5A | --- | 18 | 25 | |||
VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 1.5 | 1.8 | 2.5 | V |
△VGS (th) | VGS(th) Temperature Coefficient | --- | -5.8 | --- | mV/℃ | |
IDSS | Exhaurire-Fource Leakage Current | VDS=24V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=24V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs * | Transconductance transmittere | VDS=5V , ID=8A | --- | 9 | --- | S |
Rg | Porta Resistentia | VDS=0V , VGS=0V , f=1MHz | --- | 1.8 | 2.9 | Ω |
Qg | Totalis Porta Praecipe (4.5V) | VDS=15V , VGS=4.5V , ID=8.8A | --- | 6 | 8.4 | nC |
Qgs | Porta-Source Charge | --- | 1.5 | --- | ||
Qgd | Porta-Exhaurire præcipe | --- | 2.5 | --- | ||
Td (on) | Turn-De mora Tempus | VDD=15V , VGEN=10V , RG=6Ω ID=1A,RL=15Ω | --- | 7.5 | 9.8 | ns |
Tr | Surge Tempus | --- | 9.2 | 19 | ||
Td (off) | Turn-Off mora Tempus | --- | 19 | 34 | ||
Tf | Fall Tempus | --- | 4.2 | 8 | ||
Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 590 | 701 | pF |
Coss | Output Capacitance | --- | 98 | 112 | ||
Crss | Reverse Transfer Capacitance | --- | 59 | 91 |