WSP4447 P - Channel -40V -11A SOP-8 WINSOK MOSFET
Communia
WSP4447 est summum MOSFET faciendo quod technologiae fossae utitur et densitatem cellularum altam habet.Praeclarum RDSON et portae crimen offert, idoneum ad usum faciens in applicationibus maxime synchronis hirci convertentis.WSP4447 RoHS et Product signa viridis occurrit, et venit cum 100% EAS cautione plenae constantiae.
Features
Provectus technologiae fossae ad densitatem cellulae altioris permittit, ex in fabrica viridis cum super Low porta incurrens et effectus declinationis excellentis CdV/dt.
Applications
Princeps Frequency Converter pro varietate Electronics
Hic converter ordinatur ad efficaciter potestatem amplis machinis, inclusis laptop, ludum solatur, apparatum networkingum, e-cigarettes, phialas wireless, motores, fucos, machinas medicas, phialas currus, moderatores, productos digitales, parvas domus adjumenta, et consumere electronics.
numero materiae correspondentes
AOS AO4425 AO4485, ON FDS4675, VISHAY Si4401FDY, ST STS10P4LLF6,TOSHIBA TPC8133, PANJIT PJL9421， Sinopower SM4403PSK，RUICHIPS RU40L10H.
Magna parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | -40 | V |
| VGS | Porta-Source Voltage | ±20 | V |
| ID@TA=25℃ | Continua Exhaurire Current, VGS @ -10V1 | -11 | A |
| ID@TA=70℃ | Continua Exhaurire Current, VGS @ -10V1 | -9.0 | A |
| IDM a | 300μs Exhaurire Pulsus Current (VGS=-10V) | -44 | A |
| EAS b | NIVIS Energy, Singulus pulsus (L = 0.1mH) | 54 | mJ |
| IAS b | Avalanche Current, Single pulse (L=0.1mH) | -33 | A |
| PD@TA=25℃ | Totalis potentiae Dissipation4 | 2.0 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = -1mA | --- | -0.018 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID = -13A | --- | 13 | 16 | mΩ |
| VGS=-4.5V , ID=-5A | --- | 18 | 26 | |||
| VGS(th) | Limen Voltage | VGS=VDS , ID = -250uA | -1.4 | -1.9 | -2.4 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | 5.04 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=-32V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-32V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS=-5V, ID=-10A | --- | 18 | --- | S |
| Qg | Totalis portae incurrens (-4.5V) | VDS=-20V , VGS=-10V , ID=11A | --- | 32 | --- | nC |
| Qgs | Porta-Source Charge | --- | 5.2 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 8 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=-20V , VGS=-10V , RG=6Ω, ID=1A, RL=20Ω | --- | 14 | --- | ns |
| Tr | Surge Tempus | --- | 12 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 41 | --- | ||
| Tf | Fall Tempus | --- | 22 | --- | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 1500 | --- | pF |
| Coss | Output Capacitance | --- | 235 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 180 | --- |
