WSP4099 Dual P-Cannel -40V -6.5A SOP-8 WINSOK MOSFET
General Description
WSP4099 fossa valida est P-ch MOSFET cum densitate cellula alta. Egregium RDSON et portae crimen tradit, idoneos reddens applicationibus plurimis synchronis hircum convertentis. Occurrit RoHS et GreenProduct signa et habet 100% EAS cautionem plenae functionis firmitatis approbatione.
Features
Trench Technologia provecta cum densitate cellae altae, portae ultra-low crimen, effectum corruptionis CdV/dt praestantissimum et 100% EAS spondet omnia lineamenta viridium machinis quae parabilia sunt.
Applications
High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-cigarettes, wireless praecipientes, motores fucos, curas medicas, currus dextrarios, moderatores, productos digitales magna mauris, accumsan eu rutrum vitae, accumsan eu nisl.
numero materiae correspondentes
DE FDS4685, VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A，Sinopower SM4405BSK,dintek DTM4807, ruichips RU40S4H.
Magna parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | -40 | V |
| VGS | Porta-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, -VGS @ -10V1 | -6.5 | A |
| ID@TC=100℃ | Continua Exhaurire Current, -VGS @ -10V1 | -4.5 | A |
| IDM | Exhaurire Pulsed Current2 | -22 | A |
| EAS | Unum pulsum NIVIS Energy3 | 25 | mJ |
| IAS | NIVIS CASUS Current | -10 | A |
| PD@TC=25℃ | Totalis potentiae Dissipation4 | 2.0 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = -1mA | --- | -0.02 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-6.5A | --- | 30 | 38 | mΩ |
| VGS=-4.5V , ID=-4.5A | --- | 46 | 62 | |||
| VGS(th) | Limen Voltage | VGS=VDS , ID = -250uA | -1.5 | -2.0 | -2.5 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | 3.72 | --- | V/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=-32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=-32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS=-5V , ID=-4A | --- | 8 | --- | S |
| Qg | Totalis portae incurrens (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-6.5A | --- | 7.5 | --- | nC |
| Qgs | Porta-Source Charge | --- | 2.4 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 3.5 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=-15V , VGS=-10V , RG=6Ω, ID=-1A,RL=20Ω | --- | 8.7 | --- | ns |
| Tr | Surge Tempus | --- | 7 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 31 | --- | ||
| Tf | Fall Tempus | --- | 17 | --- | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 668 | --- | pF |
| Coss | Output Capacitance | --- | 98 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 72 | --- |
