WSP4016 N-fluvium 40V 15.5A SOP-8 WINSOK MOSFET

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WSP4016 N-fluvium 40V 15.5A SOP-8 WINSOK MOSFET

brevis descriptio:


  • Exemplar Number:WSP4016
  • BVDSS:40V
  • RDSON:11.5mΩ
  • ID:15.5A
  • Channel:N-cannel
  • Sarcina:SOP-8
  • Breviarium productum:Voltatio WSP4016 MOSFET est 40V, vena est 15.5A, resistentia est 11.5mΩ, alveus est N-alveus, sarcina est SOP-8.
  • Applicationes:Automotiva electronica, DUCTUS lumina, audio, digitales, parvas familias adjumenta, electronicas consumptores, tabulas tutelares, etc.
  • Product Detail

    Applicationem

    Product Tags

    General Description

    WSP4016 est summa munitio fossae N-ch MOSFET cum densitate cellae altae summae, quae praestantissima RDSON et portae onera in plurimis applicationibus synchronis hirci convertentis. WSP4016 occurrerunt postulationem RoHS et Producti Viridis, 100% EAS cum plena functione certa probata praestatur.

    Features

    Provectus cellulae densitatis fossae altae technologiae, Super portam Lower incurrens , Praeclara CdV/dt effectus declinationis , 100% EAS Guarantee , Available fabrica viridis.

    Applications

    White DUCTUS boost convertentium , Systems Automotives , Industriales DC/DC Circuitus Conversio , electronics Eautomotives , DUCTUS lumina , audio , productos digitales , parvas familias adjumenta , electronicas consumptores , tabulas tutelares , etc.

    numero materiae correspondentes

    AO AOSP66406, DE FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
    DINTEK DTM5420.

    Magna parametri

    Symbolum Parameter Rating Unitates
    VDS Exhaurire-Source Voltage 40 V
    VGS Porta-Source Voltage ±20 V
    ID@TC=25℃ Continua Exhaurire Current, VGS @ 10V1 15.5 A
    ID@TC=70℃ Continua Exhaurire Current, VGS @ 10V1 8.4 A
    IDM Exhaurire Pulsed Current2 30 A
    PD@TA=25℃ Totalis Power dissipatio TA=25°C 2.08 W
    PD@TA=70℃ Totalis Power dissipatio TA=LXX°C 1.3 W
    TSTG Repono Temperature Range -55 ad 150
    TJ Temperature Range Junction operating -55 ad 150

    Characteres electrici (TJ=25 , nisi aliud notentur)

    Symbolum Parameter Conditiones Min. Typ. Maximilianus. Unitas
    BVDSS Exhaurire-Source Naufragii Voltage VGS=0V , ID=250uA 40 --- --- V
    RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=7A --- 8.5 11.5
    VGS=4.5V , ID=5A --- 11 14.5
    VGS(th) Limen Voltage VGS=VDS , ID = 250uA 1.0 1.8 2.5 V
    IDSS Exhaurire-Fource Leakage Current VDS=32V , VGS=0V , TJ=25℃ --- --- 1 uA
    VDS=32V , VGS=0V , TJ=55℃ --- --- 25
    IGSS Porta-Source ultrices Current VGS=±20V , VDS=0V --- --- ±100 nA
    gfs * Transconductance transmittere VDS=5V , ID=15A --- 31 --- S
    Qg Totalis Porta Praecipe (4.5V) VDS=20V ,VGS=10V ,ID=7A --- 20 30 nC
    Qgs Porta-Source Charge --- 3.9 ---
    Qgd Porta-Exhaurire præcipe --- 3 ---
    Td (on) Turn-De mora Tempus VDD=20V,VGEN=10V,RG=1Ω, ID=1A, RL=20Ω. --- 12.6 --- ns
    Tr Surge Tempus --- 10 ---
    Td (off) Turn-Off mora Tempus --- 23.6 ---
    Tf Fall Tempus --- 6 ---
    Ciss Input Capacitance VDS=20V , VGS=0V , f=1MHz --- 1125 --- pF
    Coss Output Capacitance --- 132 ---
    Crss Reverse Transfer Capacitance --- 70 ---

    Nota :
    1.Pulse test: PW *<= 300us officium cycli<= 2%.
    2.Guaranteed by design, not subject to production test.


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