WSP4016 N-fluvium 40V 15.5A SOP-8 WINSOK MOSFET
General Description
WSP4016 est summa munitio fossae N-ch MOSFET cum densitate cellae altae summae, quae praestantissima RDSON et portae onera in plurimis applicationibus synchronis hirci convertentis. WSP4016 occurrerunt postulationem RoHS et Producti Viridis, 100% EAS cum plena functione certa probata praestatur.
Features
Provectus cellulae densitatis fossae altae technologiae, Super portam Lower incurrens , Praeclara CdV/dt effectus declinationis , 100% EAS Guarantee , Available fabrica viridis.
Applications
White DUCTUS boost convertentium , Systems Automotives , Industriales DC/DC Circuitus Conversio , electronics Eautomotives , DUCTUS lumina , audio , productos digitales , parvas familias adjumenta , electronicas consumptores , tabulas tutelares , etc.
numero materiae correspondentes
AO AOSP66406, DE FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM5420.
Magna parametri
Symbolum | Parameter | Rating | Unitates |
VDS | Exhaurire-Source Voltage | 40 | V |
VGS | Porta-Source Voltage | ±20 | V |
ID@TC=25℃ | Continua Exhaurire Current, VGS @ 10V1 | 15.5 | A |
ID@TC=70℃ | Continua Exhaurire Current, VGS @ 10V1 | 8.4 | A |
IDM | Exhaurire Pulsed Current2 | 30 | A |
PD@TA=25℃ | Totalis Power dissipatio TA=25°C | 2.08 | W |
PD@TA=70℃ | Totalis Power dissipatio TA=LXX°C | 1.3 | W |
TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
Characteres electrici (TJ=25 , nisi aliud notentur)
Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=7A | --- | 8.5 | 11.5 | mΩ |
VGS=4.5V , ID=5A | --- | 11 | 14.5 | |||
VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 1.0 | 1.8 | 2.5 | V |
IDSS | Exhaurire-Fource Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 25 | |||
IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs * | Transconductance transmittere | VDS=5V , ID=15A | --- | 31 | --- | S |
Qg | Totalis Porta Praecipe (4.5V) | VDS=20V ,VGS=10V ,ID=7A | --- | 20 | 30 | nC |
Qgs | Porta-Source Charge | --- | 3.9 | --- | ||
Qgd | Porta-Exhaurire præcipe | --- | 3 | --- | ||
Td (on) | Turn-De mora Tempus | VDD=20V,VGEN=10V,RG=1Ω, ID=1A, RL=20Ω. | --- | 12.6 | --- | ns |
Tr | Surge Tempus | --- | 10 | --- | ||
Td (off) | Turn-Off mora Tempus | --- | 23.6 | --- | ||
Tf | Fall Tempus | --- | 6 | --- | ||
Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 1125 | --- | pF |
Coss | Output Capacitance | --- | 132 | --- | ||
Crss | Reverse Transfer Capacitance | --- | 70 | --- |
Nota :
1.Pulse test: PW *<= 300us officium cycli<= 2%.
2.Guaranteed by design, not subject to production test.