WSM340N10G N-alveum 100V 340A TRICLINIARIA
Communia
WSM340N10G est fossa summa perficiendi N-Ch MOSFET summa cum densitate cellularum altarum, quae praestantissimum RDSON et portae crimen plerisque applicationibus synchronis hirci convertentis.WSM340N10G obviam RoHS et Producti Viridis postulationem, 100% EAS plenam functione firmitate probatam praestatur.
Features
Provectus altam cellam densitatis fossae technologiae , Super portae inferioris praecipe , Praeclara CdV/dt effectus declinationis , C% EAS Guarantee , Available fabrica viridis.
Applications
Rectificatio synchrona , DC/DC Converter , Load switch , instrumenti medicinalis , fuci , PD commeatus potentia , DUCTUS commeatus , instrumentum industriae , etc.
Magna parametri
Maximum Ratings
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 100 | V |
| VGS | Porta-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS @ 10V | 340 | A |
| ID@TC=100℃ | Continua Exhaurire Current, VGS @ 10V | 230 | A |
| IDM | Pulsus Exhaurire Current..TC=25°C | 1150 | A |
| EAS | Avalanche Energy, Singulus pulsus, L = 0.5mH | 1800 | mJ |
| IAS | Avalanche Current, Single pulsus, L = 0.5mH | 120 | A |
| PD@TC=25℃ | Totalis Power dissipatio | 375 | W |
| PD@TC=100℃ | Totalis Power dissipatio | 187 | W |
| TSTG | Repono Temperature Range | -55 ad 175 | ℃ |
| TJ | Temperature Range Junction operating | 175 | ℃ |
Characteres electrici (TJ=25℃, nisi aliud notentur)
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = 1mA | --- | 0.093 | --- | V/℃ |
| RDS(ON) | Static Drain-Source de Resistentia | VGS=10V,ID=50A | --- | 1.6 | 2.3 | mΩ |
| VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | -5.5 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=85V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Porta-Source ultrices Current | VGS=±25V VDS=0V | --- | --- | ±100 | nA |
| Rg | Porta Resistentia | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Totalis Porta præcipe (10V) | VDS=50V , VGS=10V ID=50A | --- | 260 | --- | nC |
| Qgs | Porta-Source Charge | --- | 80 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 60 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=50V , VGS=10V , RG=1Ω,RL=1Ω, IDS=1A. | --- | 88 | --- | ns |
| Tr | Surge Tempus | --- | 50 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 228 | --- | ||
| Tf | Fall Tempus | --- | 322 | --- | ||
| Ciss | Input Capacitance | VDS=40V , VGS=0V , f=1MHz | --- | 13900 | --- | pF |
| Coss | Output Capacitance | --- | 6160 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 220 | --- |
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