WSM320N04G N-fluvium 40V 320A TOLL-8L WINSOK MOSFET
General Description
WSM320N04G est summus perficientur MOSFET qui consilio fossa utitur et densitatem cellularum altissimam habet. Praeclarum RDSON et portae crimen habet et aptissimum est ad applicationes maxime synchronas hirci convertentis. WSM320N04G in RoHS et Viridis Product requisitis occurrit et praestatur ut 100% EAS et plenam functionem habeat constantiam.
Features
Progrediebatur alta cellula densitatis fossa technologiae, dum etiam crimen portae submissae featuring ad optimales effectus. Accedit, quod effectum declinationis effectum CdV/dt gloriatur, a 100% EAS Guarantee et optionis eco-amicae.
Applications
High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Power tool Application, Electronic cigarettes, wireless charge, fuci, medical, car increpans, moderatores, digitales, parvas familias adjumenta, et electronicas consumere.
Magna parametri
| Symbolum | Parameter | Rating | Unitates | |
| VDS | Exhaurire-Source Voltage | 40 | V | |
| VGS | Porta-Source Voltage | ±20 | V | |
| ID@TC=25℃ | Continua Exhaurire Current, VGS @ 10V1,7 | 320 | A | |
| ID@TC=100℃ | Continua Exhaurire Current, VGS @ 10V1,7 | 192 | A | |
| IDM | Exhaurire Pulsed Current2 | 900 | A | |
| EAS | Unum pulsum NIVIS Energy3 | 980 | mJ | |
| IAS | NIVIS CASUS Current | 70 | A | |
| PD@TC=25℃ | Totalis potentiae Dissipation4 | 250 | W | |
| TSTG | Repono Temperature Range | -55 ad 175 | ℃ | |
| TJ | Temperature Range Junction operating | -55 ad 175 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = 1mA | --- | 0.041 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=25A | --- | 1.2 | 1.5 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 1.7 | 2.5 | mΩ |
| VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 1.2 | 1.7 | 2.6 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=40V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=40V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS=5V , ID=50A | --- | 160 | --- | S |
| Rg | Porta Resistentia | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Totalis Porta præcipe (10V) | VDS=20V , VGS=10V , ID=25A | --- | 130 | --- | nC |
| Qgs | Porta-Source Charge | --- | 43 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 83 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=20V, VGEN=4.5V, RG=2.7Ω, ID=1A . | --- | 30 | --- | ns |
| Tr | Surge Tempus | --- | 115 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 95 | --- | ||
| Tf | Fall Tempus | --- | 80 | --- | ||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 8100 | --- | pF |
| Coss | Output Capacitance | --- | 1200 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 800 | --- |
