WSM320N04G N-fluvium 40V 320A TOLL-8L WINSOK MOSFET

Description:

Exemplar Number:WSM320N04G

BVDSS:40V

RDSON:1.2mΩ

ID:320A

Channel:N-cannel

Sarcina:TRIBUTUM-8L

Breviarium productum:WSM320N04G MOSFET intentionem habet 40V, currentis 320A, resistentiam 1.2mΩ, N-alvei, et sarcinam vectigal-8L.

Applicationes:Electronic sigarella, wireless impetum, fucos, medicos, currus incurrentes, moderatores, productos digitales, parvas familias adjumenta, electronicas consumptores.

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Product Detail

Applicationem

Product Tags

Communia

WSM320N04G est summus perficientur MOSFET qui consilio fossa utitur et densitatem cellularum altissimam habet.Praeclarum RDSON et portae crimen habet et aptissimum est ad applicationes maxime synchronas hirci convertentis.WSM320N04G in RoHS et Viridis Product requisitis occurrit et praestatur ut 100% EAS et plenam functionem habeat constantiam.

Features

Progrediebatur alta cellula densitatis fossa technologiae, dum etiam crimen portae submissae featuring ad optimales effectus.Accedit, quod effectum declinationis effectum CdV/dt gloriatur, a 100% EAS Guarantee et optionis eco-amicae.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Power tool Application, Electronic cigarettes, wireless charge, fuci, medical, car increpans, moderatoris, digitales, parvas familias adjumenta, et electronicas consumere.

Magna parametri

Symbolum	Parameter	Rating	Unitates
VDS	Exhaurire-Source Voltage	40	V
VGS	Porta-Source Voltage	±20	V
ID@TC=25℃	Continua Exhaurire Current, VGS @ 10V1,7	320	A
ID@TC=100℃	Continua Exhaurire Current, VGS @ 10V1,7	192	A
IDM	Exhaurire Pulsed Current2	900	A
EAS	Unum pulsum NIVIS Energy3	980	mJ
IAS	NIVIS CASUS Current	70	A
PD@TC=25℃	Totalis potentiae Dissipation4	250	W
TSTG	Repono Temperature Range	-55 ad 175	℃
TJ	Temperature Range Junction operating	-55 ad 175	℃

Symbolum	Parameter	Conditiones	Min.	Typ.	Maximilianus.	Unitas
BVDSS	Exhaurire-Source Naufragii Voltage	VGS=0V , ID=250uA	40	---	---	V
BVDSS/△TJ	BVDSS Temperature Coefficient	Ad 25℃, ID = 1mA	---	0.041	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=25A	---	1.2	1.5	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=20A	---	1.7	2.5	mΩ
VGS(th)	Limen Voltage	VGS=VDS , ID = 250uA	1.2	1.7	2.6	V
△VGS (th)	VGS(th) Temperature Coefficient	VGS=VDS , ID = 250uA	---	-6.94	---	mV/℃
IDSS	Exhaurire-Fource Leakage Current	VDS=40V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Exhaurire-Fource Leakage Current	VDS=40V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Porta-Source ultrices Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs *	Transconductance transmittere	VDS=5V , ID=50A	---	160	---	S
Rg	Porta Resistentia	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Totalis Porta præcipe (10V)	VDS=20V , VGS=10V , ID=25A	---	130	---	nC
Qgs	Porta-Source Charge		---	43	---
Qgd	Porta-Exhaurire præcipe		---	83	---
Td (on)	Turn-De mora Tempus	VDD=20V, VGEN=4.5V, RG=2.7Ω, ID=1A .	---	30	---	ns
Tr	Surge Tempus		---	115	---
Td (off)	Turn-Off mora Tempus		---	95	---
Tf	Fall Tempus		---	80	---
Ciss	Input Capacitance	VDS=20V , VGS=0V , f=1MHz	---	8100	---	pF
Coss	Output Capacitance		---	1200	---
Crss	Reverse Transfer Capacitance		---	800	---