WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET
General Description
WSF70P02 MOSFET est summum faciendo P-alvei fossae fabrica cum densitate cellula alta. Praeclaram RDSON et portae crimen offert pro applicationibus maxime synchronis hircum convertentis. Consilium RoHS et Viridis Product requisitis obvium est, 100% EAS in tuto, et ad plenam functionem constantiam probatus est.
Features
Trench Technologia provecta cum densitate cellae altae, super portae humilitatis crimen, reductionem in effectum CdV/dt, a 100% EAS spondet, et optiones pro environmentally-amica machinationibus.
Applications
High Frequency Point-of-Load Synchronum ,Buck Converter pro MB/NB/UMPC/VGA ,Networking DC-DC Power System ,Load Switch, E-cigarettes, wireless praecipientes, motores, subitis commeatus, fuci, medicinae cura, phialas currus moderatores, digitales, parvas familias adjumenta, electronicarum rerumque consumptores.
numero materiae correspondentes
AOS
Magna parametri
| Symbolum | Parameter | Rating | Unitates | |
| 10s | Stabilis publica | |||
| VDS | Exhaurire-Source Voltage | -20 | V | |
| VGS | Porta-Source Voltage | ±12 | V | |
| ID@TC=25℃ | Continua Exhaurire Current, VGS @ -10V1 | -70 | A | |
| ID@TC=100℃ | Continua Exhaurire Current, VGS @ -10V1 | -36 | A | |
| IDM | Exhaurire Pulsed Current2 | -200 | A | |
| EAS | Unum pulsum NIVIS Energy3 | 360 | mJ | |
| IAS | NIVIS CASUS Current | -55.4 | A | |
| PD@TC=25℃ | Totalis potentiae Dissipation4 | 80 | W | |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ | |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ | |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = -1mA | --- | -0.018 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V, ID=15A | --- | 6.8 | 9.0 | mΩ |
| VGS=-2.5V, ID=-10A | --- | 8.2 | 11 | |||
| VGS(th) | Limen Voltage | VGS=VDS , ID = -250uA | -0.4 | -0.6 | -1.2 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | 2.94 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=-20V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=-20V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±12V VDS=0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS=-5V, ID=-10A | --- | 45 | --- | S |
| Qg | Totalis portae incurrens (-4.5V) | VDS=-15V, VGS=-4.5V, ID=-10A | --- | 63 | --- | nC |
| Qgs | Porta-Source Charge | --- | 9.1 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 13 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-10A | --- | 16 | --- | ns |
| Tr | Surge Tempus | --- | 77 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 195 | --- | ||
| Tf | Fall Tempus | --- | 186 | --- | ||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | --- | 5783 | --- | pF |
| Coss | Output Capacitance | --- | 520 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 445 | --- |
