WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET

brevis descriptio:

Exemplar Number:WSF70P02

BVDSS:-20V

RDSON:6.8mΩ

ID:-70A

Channel:P-Channel

Sarcina:TO-252

Breviarium productum:WSF70P02 MOSFET intentionem habet -20V, currentis -70A, resistentiae 6.8mΩ, P-channel, et TO-252 packing.

Applicationes:E-cigarettes, phialas, motores, potentia tergum, fuci, curis, currus actores, moderatores, electronicas, adjumenta et bona consumendi.

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General Description

WSF70P02 MOSFET est summum faciendo P-alvei fossae fabrica cum densitate cellula alta. Praeclarum RDSON et portae crimen offert pro applicationibus maxime synchronis hirci convertentis. Consilium RoHS et Viridis Product requisitis obvium est, 100% EAS in tuto, et ad plenam functionem constantiam probatus est.

Features

Trench Technologia provecta cum densitate cellae altae, super portae humilis crimen, reductionis in effectum CdV/dt, a 100% EAS spondet, et optiones pro environmentally-amica machinationibus.

Applications

High Frequency Point-of-Load Synchronum ,Buck Converter pro MB/NB/UMPC/VGA ,Networking DC-DC Power System ,Load Switch, E-cigarettes, wireless praecipientes, motores, subitis commeatus, fucos, medicas curas, phialas currus moderatores, digitales, parvas familias adjumenta, electronicarum rerumque consumptores.

numero materiae correspondentes

AOS

Magna parametri

Symbolum	Parameter	Rating		Unitates
		10s	Stabilis publica
VDS	Exhaurire-Source Voltage	-20		V
VGS	Porta-Source Voltage	±12		V
ID@TC=25℃	Continua Exhaurire Current, VGS @ -10V1	-70		A
ID@TC=100℃	Continua Exhaurire Current, VGS @ -10V1	-36		A
IDM	Exhaurire Pulsed Current2	-200		A
EAS	Unum pulsum NIVIS Energy3	360		mJ
IAS	NIVIS CASUS Current	-55.4		A
PD@TC=25℃	Totalis potentiae Dissipation4	80		W
TSTG	Repono Temperature Range	-55 ad 150		℃
TJ	Temperature Range Junction operating	-55 ad 150		℃

Symbolum	Parameter	Conditiones	Min.	Typ.	Maximilianus.	Unitas
BVDSS	Exhaurire-Source Naufragii Voltage	VGS=0V , ID=-250uA	-20	---	---	V
BVDSS/△TJ	BVDSS Temperature Coefficient	Ad 25℃, ID = -1mA	---	-0.018	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V, ID=15A	---	6.8	9.0	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-2.5V, ID=-10A	---	8.2	11
VGS(th)	Limen Voltage	VGS=VDS , ID = -250uA	-0.4	-0.6	-1.2	V
		VGS=VDS , ID = -250uA
VGS (th)	VGS(th) Temperature Coefficient		---	2.94	---	mV/℃
IDSS	Exhaurire-Fource Leakage Current	VDS=-20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Exhaurire-Fource Leakage Current					uA
		VDS=-20V , VGS=0V , TJ=55℃	---	---	5
IGSS	Porta-Source ultrices Current	VGS=±12V VDS=0V	---	---	±100	nA
gfs *	Transconductance transmittere	VDS=-5V, ID=-10A	---	45	---	S
Qg	Totalis portae incurrens (-4.5V)	VDS=-15V, VGS=-4.5V, ID=-10A	---	63	---	nC
Qgs	Porta-Source Charge		---	9.1	---
Qgd	Porta-Exhaurire præcipe		---	13	---
Td (on)	Turn-De mora Tempus	VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-10A	---	16	---	ns
Tr	Surge Tempus		---	77	---
Td (off)	Turn-Off mora Tempus		---	195	---
Tf	Fall Tempus		---	186	---
Ciss	Input Capacitance	VDS=-10V , VGS=0V , f=1MHz	---	5783	---	pF
Coss	Output Capacitance		---	520	---
Crss	Reverse Transfer Capacitance		---	445	---