WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET
General Description
WSF6012 MOSFET fabrica summus perficientur cum consilio cellulae densitatis altae est. Praeclarum RDSON et portae praefectum praebet aptissimum ad applicationes maxime synchronas hirci convertentis. Accedit, occurrit RoHS et Productus Green requisitis, et venit cum 100% EAS cautione plenae utilitatis et constantiae.
Features
Provectus Trench Technology cum High Cell Densitas, Super Porta Low Praecipe, Praeclara CdV/dt Effectum Decline, C% EAS Guarantee, et Environmentally-Friendly Device Options.
Applications
High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, wireless praecipiens motors, emergency power commeatus, fuci, curis, currus dextrarii, moderatoris, machinas digitales, parva domus adjumenta; et dolor eu nisl.
numero materiae correspondentes
AOS AOD603A;
Magna parametri
| Symbolum | Parameter | Rating | Unitates | |
| N-Channel | P-Channel | |||
| VDS | Exhaurire-Source Voltage | 60 | -60 | V |
| VGS | Porta-Source Voltage | ±20 | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS @ 10V1 | 20 | -15 | A |
| ID@TC=70℃ | Continua Exhaurire Current, VGS @ 10V1 | 15 | -10 | A |
| IDM | Exhaurire Pulsed Current2 | 46 | -36 | A |
| EAS | Unum pulsum NIVIS Energy3 | 200 | 180 | mJ |
| IAS | NIVIS CASUS Current | 59 | -50 | A |
| PD@TC=25℃ | Totalis potentiae Dissipation4 | 34.7 | 34.7 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = 1mA | --- | 0.093 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=8A | --- | 28 | 37 | mΩ |
| VGS=4.5V , ID=5A | --- | 37 | 45 | |||
| VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 1 | --- | 2.5 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | 5.24 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS=5V , ID=8A | --- | 21 | --- | S |
| Rg | Porta Resistentia | VDS=0V , VGS=0V , f=1MHz | --- | 3.0 | 4.5 | Ω |
| Qg | Totalis Porta Praecipe (4.5V) | VDS=48V , VGS=4.5V , ID=8A | --- | 12.6 | 20 | nC |
| Qgs | Porta-Source Charge | --- | 3.5 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 6.3 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=30V , VGS=4.5V , RG=3.3Ω, ID=1A | --- | 8 | --- | ns |
| Tr | Surge Tempus | --- | 14.2 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 24.6 | --- | ||
| Tf | Fall Tempus | --- | 4.6 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 670 | --- | pF |
| Coss | Output Capacitance | --- | 70 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 35 | --- |
