WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

Description:

Exemplar Number:WSF6012

BVDSS:60V/-60V

RDSON:28mΩ/75mΩ

ID:20A/-15A

Channel:N&P-Channel

Sarcina:TO-252-4L

Breviarium productum:WSF6012 MOSFET intentionem 60V et -60V habet, excursus usque ad 20A et -15A tractare potest, resistentiam habet 28mΩ et 75mΩ, lineamenta tam N&P-Channel, et in TO-252-4L fasciculata est.

Applicationes:E-cigarettes, phialas, motores, potentia tergum, fuci, curis, currus actores, moderatores, electronicas, adjumenta et bona consumendi.

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Product Detail

Applicationem

Product Tags

Communia

WSF6012 MOSFET fabrica summus perficientur cum consilio cellulae densitatis altae est.Praeclarum RDSON et portae praefectum praebet aptissimum ad applicationes maxime synchronas hirci convertentis.Accedit, occurrit RoHS et Productus Green requisitis, et venit cum 100% EAS cautione plenae utilitatis et constantiae.

Features

Provectus Trench Technology cum High Cell Densitas, Super Porta Low Praecipe, Praeclara CdV/dt Effectum Decline, 100% EAS Guarantee, et Environmentally Amicitias Device Options.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, wireless praecipiens, motors, emergency power commeatus, fuci, curis, currus dextrarii, moderatoris, machinas digitales, parva domus adjumenta; et dolor eu nisl.

numero materiae correspondentes

AOS AOD603A;

Magna parametri

Symbolum	Parameter	Rating		Unitates
Symbolum	Parameter	N-Channel	P-Channel	Unitates
VDS	Exhaurire-Source Voltage	60	-60	V
VGS	Porta-Source Voltage	±20	±20	V
ID@TC=25℃	Continua Exhaurire Current, VGS @ 10V1	20	-15	A
ID@TC=70℃	Continua Exhaurire Current, VGS @ 10V1	15	-10	A
IDM	Exhaurire Pulsed Current2	46	-36	A
EAS	Unum pulsum NIVIS Energy3	200	180	mJ
IAS	NIVIS CASUS Current	59	-50	A
PD@TC=25℃	Totalis potentiae Dissipation4	34.7	34.7	W
TSTG	Repono Temperature Range	-55 ad 150	-55 ad 150	℃
TJ	Temperature Range Junction operating	-55 ad 150	-55 ad 150	℃

Symbolum	Parameter	Conditiones	Min.	Typ.	Maximilianus.	Unitas
BVDSS	Exhaurire-Source Naufragii Voltage	VGS=0V , ID=250uA	60	---	---	V
BVDSS/△TJ	BVDSS Temperature Coefficient	Ad 25℃, ID = 1mA	---	0.093	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=8A	---	28	37	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=5A	---	37	45	mΩ
VGS(th)	Limen Voltage	VGS=VDS , ID = 250uA	1	---	2.5	V
△VGS (th)	VGS(th) Temperature Coefficient	VGS=VDS , ID = 250uA	---	5.24	---	mV/℃
IDSS	Exhaurire-Fource Leakage Current	VDS=48V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Exhaurire-Fource Leakage Current	VDS=48V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Porta-Source ultrices Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs *	Transconductance transmittere	VDS=5V , ID=8A	---	21	---	S
Rg	Porta Resistentia	VDS=0V , VGS=0V , f=1MHz	---	3.0	4.5	Ω
Qg	Totalis Porta Praecipe (4.5V)	VDS=48V , VGS=4.5V , ID=8A	---	12.6	20	nC
Qgs	Porta-Source Charge		---	3.5	---
Qgd	Porta-Exhaurire præcipe		---	6.3	---
Td (on)	Turn-De mora Tempus	VDD=30V , VGS=4.5V , RG=3.3Ω, ID=1A	---	8	---	ns
Tr	Surge Tempus		---	14.2	---
Td (off)	Turn-Off mora Tempus		---	24.6	---
Tf	Fall Tempus		---	4.6	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	670	---	pF
Coss	Output Capacitance		---	70	---
Crss	Reverse Transfer Capacitance		---	35	---