WSF4022 Dual N-Channel 40V 20A TO-252-4L WINSOK MOSFET
General Description
WSF4022 est summa operandi fossam Dual N-Ch MOSFET cum densitate summa altae cellae, quae praestantissimum RDSON et portae crimen plerisque applicationibus synchroni hirci convertentis. The WSF4022 obviam RoHS et Viridis Productum postulationem 100% EAS cum plena functione praestitum. commendatio approbata.
Features
Pro Fan Pre-coegi H-Bridge, Motoris Imperium, Synchroni Rectificatio, E-cigarettes, wireless praecipientes, motores, subitis copiis, fuci, curas medicas, currus dextrarios, moderatores, digitales, parvas familias adjumenta, electronicas consumere.
Applications
Pro Fan Pre-coegi H-Bridge, Motoris Imperium, Synchroni Rectificatio, E-cigarettes, wireless praecipientes, motores, subitis copiis, fuci, curas medicas, currus dextrarios, moderatores, digitales, parvas familias adjumenta, electronicas consumere.
numero materiae correspondentes
AOS
Magna parametri
| Symbolum | Parameter | Rating | Unitates | |
| VDS | Exhaurire-Source Voltage | 40 | V | |
| VGS | Porta-Source Voltage | ±20 | V | |
| ID | Exhaurire Current (Continuus) * AC | TC=25°C | 20* | A |
| ID | Exhaurire Current (Continuus) * AC | TC=100°C | 20* | A |
| ID | Exhaurire Current (Continuus) * AC | TA=25°C | 12.2 | A |
| ID | Exhaurire Current (Continuus) * AC | TA=70°C | 10.2 | A |
| IDMa | Exhaurire Current Pulsed | TC=25°C | 80* | A |
| EASb | Unum pulsum NIVIS Energy | L=0.5mH | 25 | mJ |
| IAS b | NIVIS CASUS Current | L=0.5mH | 17.8 | A |
| PD | Maximam potestatem dissipatio | TC=25°C | 39.4 | W |
| PD | Maximam potestatem dissipatio | TC=100°C | 19.7 | W |
| PD | Potentia dissipatio | TA=25°C | 6.4 | W |
| PD | Potentia dissipatio | TA=70°C | 4.2 | W |
| TJ | Temperature Range Junction operating | 175 | ℃ | |
| TSTG | Operating Temperature / at Temperature | -55~ 175 | ℃ | |
| RθJA b | Scelerisque resistentia adiunctae-Ambient | Stabilis rei publicae c * | 60 | /W |
| RθJC | Scelerisque Repugnantia adiunctae ad Case | 3.8 | /W |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| Static | ||||||
| V(BR)DSS | Exhaurire-Source Naufragii Voltage | VGS = 0V, ID = 250μA | 40 | V | ||
| IDSS | Nulla porta Voltage Exhaurire Current | VDS = 32V, VGS = 0V | 1 | µA | ||
| IDSS | Nulla porta Voltage Exhaurire Current | VDS = 32V, VGS = 0V, TJ=85°C | 30 | µA | ||
| IGSS | Porta ultrices Current | VGS = ± 20V, VDS = 0V | ±100 | nA | ||
| VGS(th) | Limen Voltage | VGS = VDS, IDS = 250µA | 1.1 | 1.6 | 2.5 | V |
| RDS(on) d* | Exhaurire Source De-statu resistentia | VGS = 10V, ID = 10A . | 16 | 21 | mΩ | |
| VGS = 4.5V, ID = 5A . | 18 | 25 | mΩ | |||
| Porta Chargee | ||||||
| Qg | Totalis porta præcipe | VDS=20V,VGS=4.5V, ID=10A | 7.5 | nC | ||
| Qgs | Porta-Source Charge | 3.24 | nC | |||
| Qgd | Porta-Exhaurire præcipe | 2.75 | nC | |||
| Dynamice | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=20V, f=1MHz | 815 | pF | ||
| Coss | Output Capacitance | 95 | pF | |||
| Crss | Reverse Transfer Capacitance | 60 | pF | |||
| td (on) | Turn-in mora Tempus | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 7.8 | ns | ||
| tr | Turn, in Surge Tempus | 6.9 | ns | |||
| td (off) | Turn-off Mora Tempus | 22.4 | ns | |||
| tf | Turn-off Fall Tempus | 4.8 | ns | |||
| Diode | ||||||
| VSDd | Diode Deinceps intentione | ISD=1A, VGS=0V | 0.75 | 1.1 | V | |
| trr* | Input Capacitance | IDS=10A, dlSD/dt=100A/µs | 13 | ns | ||
| Qrr | Output Capacitance | 8.7 | nC | |||
