WSF35N10 WSF50N10G N- alveum 100V 40A TO-252-2L WINSOK MOSFET

products

WSF35N10 WSF50N10G N- alveum 100V 40A TO-252-2L WINSOK MOSFET

brevis descriptio:

Pars NumberWSF35N10 WSF50N10G

BVDSS:100V

ID:40A

RDSON:13.8mΩ

Channel:N-cannel

sarcina:TO-252-2L


Product Detail

Applicationem

Product Tags

WINSOK MOSFET productum overview:

Voltatio WSF35N10 WSF50N10G MOSFET est 100V, vena est 40A, resistentia est 13.8mΩ, alveus est N-alveus, sarcina TO-252-2L.

WINSOK MOSFET application areas

Automotiva electronicarum, POE, DUCTUS lumina, audio, productos digitales, parva auxilia, electronicas consumptores, tabulas tutelae.

WINSOK MOSFET respondet aliis numeris materialibus notam.

AOS AOD2910E AOD4126, ST STD65N3LLH5 STD20NF06LAG STD100N3LF3 STD25N10F7 STD100N3LF3 STD35NF06 STD155N3LH6, INFINEON, IR IPD180N10N3G IPD25CN10NG, PANJIT PJD50N10AL, POTENS PJD50N10AL, POTENS PJD50N10AL, POTENT PJD50N10AL, POTENT PJD50N10AL, IR IPD180N10N3G IPD25CN10NG, PANJIT PJD50N10AL, POTENS PJD50N10AL, POTENT PJD50N10AL, POTENS PJD50N10AL, POTENT PJD50N10AL, IR

Magna parametri

Pars, numerus

Configurationis

Type

VDS

VGS

ID,(A)

RDS(ON)(mΩ)

RDS(ON)(mΩ)

Ciss

sarcina

@10V

@6V

@4.5V

@2.5V

@1.8V

(V)

±(V)

Maximilianus.

Typ.

Maximilianus.

Typ.

Maximilianus.

Typ.

Maximilianus.

Typ.

Maximilianus.

Typ.

Maximilianus.

(pF)

WSF35N10

Unius

N-Ch

100

20

35

36

48

-

-

39

55

-

-

-

-

1964

TO-252-2L

WSF50N10G

Unius

N-Ch

100

20

40

13.8

20

-

-

17.4

26

-

-

-

-

1003.9

TO-252-2L


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