WSD80120DN56 N-channel 85V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD80120DN56 MOSFET est 85V, hodierna est 120A, resistentia est 3.7mΩ, canalis est N-cannel, et sarcina est DFN5X6-8.
WINSOK MOSFET application areas
Medicamenta voltage MOSFET, apparatu photographico MOSFET, fuci MOSFET, industrialis imperium MOSFET, 5G MOSFET, autocinetivi electronici MOSFET.
WINSOK MOSFET respondet aliis numeris materialibus notam
AOS MOSFET AON6276, AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 85 | V |
| VGS | Porta-Source intentione | ±25 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS@ 10V | 120 | A |
| ID@TC= 100℃ | Continua Exhaurire Current, VGS@ 10V | 96 | A |
| IDM | Exhaurire Current Pulsed..TC=25°C | 384 | A |
| EAS | Avalanche Energy, Singulus pulsus, L = 0.5mH | 320 | mJ |
| IAS | Avalanche Current, Single pulsus, L = 0.5mH | 180 | A |
| PD@TC=25℃ | Totalis Power dissipatio | 104 | W |
| PD@TC= 100℃ | Totalis Power dissipatio | 53 | W |
| TSTG | Repono Temperature Range | -55 ad 175 | ℃ |
| TJ | Temperature Range Junction operating | 175 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 85 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Ad 25℃, EGOD= 1mA | --- | 0.093 | --- | V/℃ |
| RDS(ON) | Static Drain-Source de Resistentia | VGS= 10V,ID= 50A | --- | 3.7 | 4.8 | mΩ |
| VGS(th) | Limen Voltage | VGS=VDS, EGOD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (th) | VGS (th)Temperature Coefficient | --- | -5.5 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 85V , VGS= 0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS= 85V , VGS= 0V , TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Porta-Source ultrices Current | VGS=±25V , VDS= 0V | --- | --- | ±100 | nA |
| Rg | Porta Resistentia | VDS= 0V , VGS= 0V , f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Totalis Porta præcipe (10V) | VDS= 50V , VGS= 10V , ID= 10A | --- | 54 | --- | nC |
| Qgs | Porta-Source Charge | --- | 17 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 11 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= 50V , VGS= 10V , RG=1ΩRL=Ω,IDS=10A. | --- | 21 | --- | ns |
| Tr | Surge Tempus | --- | 18 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 36 | --- | ||
| Tf | Fall Tempus | --- | 10 | --- | ||
| Ciss | Input Capacitance | VDS= 40V , VGS= 0V , f=1MHz | --- | 3750 | --- | pF |
| Coss | Output Capacitance | --- | 395 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 180 | --- |
