WSD80100DN56 N-fluvium 80V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD80100DN56 MOSFET est 80V, current 100A, resistentia est 6.1mΩ, alveus est N-alveus, sarcina DFN5X6-8.
WINSOK MOSFET application areas
Fuci MOSFET, motores MOSFET, electronici MOSFET autocineti, adjumenta majora MOSFET.
WINSOK MOSFET respondet aliis numeris materialibus notam
AOS MOSFET AON6276, AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 80 | V |
| VGS | Porta-Source intentione | ±20 | V |
| TJ | Maximum adiunctionis Temperature | 150 | °C |
| ID | Repono Temperature Range | -55 ad 150 | °C |
| ID | Continua Exhaurire Current, VGS=10V,TC=25°C | 100 | A |
| Continua Exhaurire Current, VGS=10V,TC=100°C | 80 | A | |
| IDM | Exhaurire Pulsed Current, TC=25°C | 380 | A |
| PD | Maximam potestatem dissipatio, TC=25°C | 200 | W |
| RqJC | Scelerisque resistentia adiunctae ad Case | 0.8 | °C |
| EAS | Avalanche Energy, Singulus pulsus, L = 0.5mH | 800 | mJ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 80 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Ad 25℃, EGOD= 1mA | --- | 0.041 | --- | V/℃ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=10V , ID= 40A | --- | 6.1 | 8.5 | mΩ |
| VGS(th) | Limen Voltage | VGS=VDS, EGOD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (th) | VGS (th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 48V , VGS= 0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS= 48V , VGS= 0V , TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS= 5V , ID= 20A | 80 | --- | --- | S |
| Qg | Totalis Porta præcipe (10V) | VDS= 30V , VGS= 10V , ID= 30A | --- | 125 | --- | nC |
| Qgs | Porta-Source Charge | --- | 24 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 30 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= 30V , VGS= 10V , RG=2.5Ω, EGOD==2A RL=15Ω. | --- | 20 | --- | ns |
| Tr | Surge Tempus | --- | 19 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 70 | --- | ||
| Tf | Fall Tempus | --- | 30 | --- | ||
| Ciss | Input Capacitance | VDS= 25V , VGS= 0V , f=1MHz | --- | 4900 | --- | pF |
| Coss | Output Capacitance | --- | 410 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 315 | --- |
