WSD75N12GDN56 N-canale 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD75N12GDN56 MOSFET est 120V, hodierna est 75A, resistentia est 6mΩ, alveus est N-cannel, et sarcina est DFN5X6-8.
WINSOK MOSFET application areas
Instrumentum medicinae MOSFET, fuci MOSFET, PD vim tribuit MOSFET, DUXERIT potestatem MOSFET, apparatum industriae MOSFET.
MOSFET application fieldsWINSOK MOSFET respondet aliis notam materiales numeros
AOS MOSFET AON6226,AON6294,AON6298,AONS6292, AONS6692, AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDSS | Exhaurire-ut-Source Voltage | 120 | V |
| VGS | Porta ad Fontem Voltage | ±20 | V |
| ID | 1 Continua Exhaurire Current (Tc=25℃) | 75 | A |
| ID | 1 Continua Exhaurire Current (Tc=70℃) | 70 | A |
| IDM | Exhaurire Current Pulsed | 320 | A |
| IAR | Unius venae NIVIS CASUS | 40 | A |
| EASa | Una pulsus NIVIS industria | 240 | mJ |
| PD | Potentia dissipatio | 125 | W |
| TJ，Tstg | Operans Junctiones et Repono Temperature Range | -55 ad 150 | ℃ |
| TL | Maximum Temperature pro Solding | 260 | ℃ |
| RθJC | Scelerisque resistentia, adiunctae-ad-casus | 1.0 | /W |
| RθJA | Scelerisque resistentia, adiunctae-ad-ambientium | 50 | /W |
| Symbolum | Parameter | Tempestas Test | Min. | Typ. | Maximilianus. | Unitates |
| VDSS | Exhaurire ad Source DEFECTIO intentione | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Exhaurire ad Source lacus Current | VDS = 120V, VGS= 0V | -- | -- | 1 | µA |
| IGSS(F) | Porta ad Source ante ultrices | VGS =+20V | -- | -- | 100 | nA |
| IGSS(R) | Porta ad Source Reverse Leakage | VGS =-20V | -- | -- | -100 | nA |
| VGS(TH) | Limen Voltage | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON)1 | Exhaurire-ad-Source de Resistentia | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS' | Transconductance transmittere | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Input Capacitance | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| Coss | Output Capacitance | -- | 429 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 17 | -- | pF | |
| Rg | Porta resistentia | -- | 2.5 | -- | Ω | |
| td (DE) | Turn-in mora Tempus | ID = 20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Surge Tempus | -- | 11 | -- | ns | |
| td (ON) | Turn-Off mora Tempus | -- | 55 | -- | ns | |
| tf | Fall Tempus | -- | 28 | -- | ns | |
| Qg | Totalis porta præcipe | VGS = 0~10V VDS = 50VID = 20A | -- | 61.4 | -- | nC |
| Qgs | Porta Source præcipe | -- | 17.4 | -- | nC | |
| Qgd | Porta Exhaurire præcipe | -- | 14.1 | -- | nC | |
| IS | Diode Deinceps Current | TC = 25 °C | -- | -- | 100 | A |
| ISM | Diode Pulsus Current | -- | -- | 320 | A | |
| VSD | Diode Deinceps intentione | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr* | Vicissim Recuperatio | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Inversa Recuperatio præcipe | -- | 250 | -- | nC |
