WSD60N12GDN56 N alveum 120V 70A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD60N12GDN56 MOSFET est 120V, hodierna est 70A, resistentia est 10mΩ, alveus est N-alveus, sarcina est DFN5X6-8.
WINSOK MOSFET application areas
Instrumentum medicinae MOSFET, fuci MOSFET, PD vim tribuit MOSFET, DUXERIT potestatem MOSFET, apparatum industriae MOSFET.
MOSFET application fieldsWINSOK MOSFET respondet aliis notam materialium numerorum
AOS MOSFET AON6226,AON6294,AON6298,AONS6292, AONS6692, AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 120 | V |
| VGS | Porta-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current | 70 | A |
| IDP | Exhaurire Current Pulsed | 150 | A |
| EAS | NIVIS Energy, Una pulsus | 53.8 | mJ |
| PD@TC=25℃ | Totalis Power dissipatio | 140 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 120 | --- | --- | V |
| Static Drain-Source de Resistentia | VGS=10V,ID=10A. | --- | 10 | 15 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 18 | 25 | mΩ | |
| VGS(th) | Limen Voltage | VGS=VDS, ID= 250uA | 1.2 | --- | 2.5 | V |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 80V , VGS= 0V , TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
| Qg | Totalis Porta præcipe (10V) | VDS= 50V , VGS= 10V , ID=25A | --- | 33 | --- | nC |
| Qgs | Porta-Source Charge | --- | 5.6 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 7.2 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= 50V , VGS= 10V , RG= Ω, ID=25A | --- | 22 | --- | ns |
| Tr | Surge Tempus | --- | 10 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 85 | --- | ||
| Tf | Fall Tempus | --- | 112 | --- | ||
| Ciss | Input Capacitance | VDS= 50V , VGS= 0V , f=1MHz | --- | 2640 | --- | pF |
| Coss | Output Capacitance | --- | 330 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 11 | --- | ||
| IS | Continua Source Current | VG=VD= 0V , Force Current | --- | --- | 50 | A |
| ISP | Pulsus Source Current | --- | --- | 150 | A | |
| VSD | Diode Deinceps intentione | VGS= 0V , IS= 12A , TJ=25℃ | --- | --- | 1.3 | V |
| trr | Tempus inversa Recuperatio | IF=25A,dI/dt=100A/µs,TJ=25℃ | --- | 62 | --- | nS |
| Qrr | Inversa Recuperatio præcipe | --- | 135 | --- | nC |
