WSD60N10GDN56 N alveum 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD60N10GDN56 MOSFET est 100V, vena est 60A, resistentia est 8.5mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.
WINSOK MOSFET application areas
E-cigarettes MOSFET, notationes wireless MOSFET, motores MOSFET, fucos MOSFET, curas medicas MOSFET, autocinetas MOSFET, moderatores MOSFET, productos digitales MOSFET, parvas familias adjumenta MOSFET, dolor electronicis MOSFET.
MOSFET application fieldsWINSOK MOSFET respondet aliis notam materiales numeros
AOS MOSFET AON6226,AON6294,AON6298,AONS6292, AONS6692, AONS66923. Onsemi, FAIRFET MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINEON,IR MOSFET BSC19N1NS3G.TOSHIBA PJ MOSFET . Q5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 100 | V |
| VGS | Porta-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current | 60 | A |
| IDP | Exhaurire Current Pulsed | 210 | A |
| EAS | NIVIS Energy, Una pulsus | 100 | mJ |
| PD@TC=25℃ | Totalis Power dissipatio | 125 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 100 | --- | --- | V |
| Static Drain-Source de Resistentia | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Limen Voltage | VGS=VDS, EGOD= 250uA | 1.0 | --- | 2.5 | V |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 80V , VGS= 0V , TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
| Qg | Totalis Porta præcipe (10V) | VDS= 50V , VGS= 10V , ID=25A | --- | 49.9 | --- | nC |
| Qgs | Porta-Source Charge | --- | 6.5 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 12.4 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= 50V , VGS= 10V ,RG=2.2Ω, ID=25A | --- | 20.6 | --- | ns |
| Tr | Surge Tempus | --- | 5 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 51.8 | --- | ||
| Tf | Fall Tempus | --- | 9 | --- | ||
| Ciss | Input Capacitance | VDS= 50V , VGS= 0V , f=1MHz | --- | 2604 | --- | pF |
| Coss | Output Capacitance | --- | 362 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 6.5 | --- | ||
| IS | Continua Source Current | VG=VD= 0V , Force Current | --- | --- | 60 | A |
| ISP | Pulsus Source Current | --- | --- | 210 | A | |
| VSD | Diode Deinceps intentione | VGS= 0V , IS= 12A , TJ=25℃ | --- | --- | 1.3 | V |
| trr | Tempus inversa Recuperatio | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | Inversa Recuperatio præcipe | --- | 106.1 | --- | nC |
