WSD60N10GDN56 N alveum 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD60N10GDN56 MOSFET est 100V, vena est 60A, resistentia est 8.5mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.
WINSOK MOSFET application areas
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MOSFET application fieldsWINSOK MOSFET respondet aliis notam materiales numeros
AOS MOSFET AON6226,AON6294,AON6298,AONS6292, AONS6692, AONS66923. Onsemi, FAIRFET MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINEON, IR MOSFET BSC19N1NS3G.TOSHIBA RJP 5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 100 | V |
| VGS | Porta-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current | 60 | A |
| IDP | Exhaurire Current Pulsed | 210 | A |
| EAS | NIVIS Energy, Una pulsus | 100 | mJ |
| PD@TC=25℃ | Totalis Power dissipatio | 125 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 100 | --- | --- | V |
| Static Drain-Source de Resistentia | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Limen Voltage | VGS=VDS, ID= 250uA | 1.0 | --- | 2.5 | V |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 80V , VGS= 0V , TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
| Qg | Totalis Porta præcipe (10V) | VDS= 50V , VGS= 10V , ID=25A | --- | 49.9 | --- | nC |
| Qgs | Porta-Source Charge | --- | 6.5 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 12.4 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= 50V , VGS= 10V ,RG=2.2Ω, ID=25A | --- | 20.6 | --- | ns |
| Tr | Surge Tempus | --- | 5 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 51.8 | --- | ||
| Tf | Fall Tempus | --- | 9 | --- | ||
| Ciss | Input Capacitance | VDS= 50V , VGS= 0V , f=1MHz | --- | 2604 | --- | pF |
| Coss | Output Capacitance | --- | 362 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 6.5 | --- | ||
| IS | Continua Source Current | VG=VD= 0V , Force Current | --- | --- | 60 | A |
| ISP | Pulsus Source Current | --- | --- | 210 | A | |
| VSD | Diode Deinceps intentione | VGS= 0V , IS= 12A , TJ=25℃ | --- | --- | 1.3 | V |
| trr | Tempus inversa Recuperatio | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | Inversa Recuperatio præcipe | --- | 106.1 | --- | nC |
