WSD6070DN56 N-fluvium 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD6070DN56 MOSFET est 60V, hodierna est 80A, resistentia est 7.3mΩ, alveus est N-alveus, sarcina est DFN5X6-8.
WINSOK MOSFET application areas
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WINSOK MOSFET respondet aliis numeris materialibus notam
POTENS Semiconductor MOSFET PDC696X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 60 | V |
| VGS | Porta-Source intentione | ±20 | V |
| TJ | Maximum adiunctionis Temperature | 150 | °C |
| ID | Repono Temperature Range | -55 ad 150 | °C |
| IS | Diode Continua deinceps Current, TC=25°C | 80 | A |
| ID | Continua Exhaurire Current, VGS=10V,TC=25°C | 80 | A |
| Continua Exhaurire Current, VGS=10V,TC=100°C | 66 | A | |
| IDM | Exhaurire Pulsed Current, TC=25°C | 300 | A |
| PD | Maximam potestatem dissipatio, TC=25°C | 150 | W |
| Maximam potestatem dissipatio, TC=100°C | 75 | W | |
| RθJA | Scelerisque resistentiae adiunctis ambientibus , t = 10s | 50 | °C/W |
| Scelerisque resistentia adiunctae ad Ambientium, Stabilis publicae | 62.5 | °C/W | |
| RqJC | Scelerisque resistentia adiunctae ad Case | 1 | °C/W |
| IAS | Avalanche Current, Single pulsus, L = 0.5mH | 30 | A |
| EAS | Avalanche Energy, Singulus pulsus, L = 0.5mH | 225 | mJ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Ad 25℃, EGOD= 1mA | --- | 0.041 | --- | V/℃ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=10V , ID= 40A | --- | 7.0 | 9.0 | mΩ |
| VGS(th) | Limen Voltage | VGS=VDS, EGOD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS (th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 48V , VGS= 0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS= 48V , VGS= 0V , TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS= 5V , ID= 20A | --- | 50 | --- | S |
| Rg | Porta Resistentia | VDS= 0V , VGS= 0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Totalis Porta præcipe (10V) | VDS= 30V , VGS= 10V , ID= 40A | --- | 48 | --- | nC |
| Qgs | Porta-Source Charge | --- | 17 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 12 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= 30V , VGEN= 10V , RG=1Ω, EGOD=1A RL=15Ω. | --- | 16 | --- | ns |
| Tr | Surge Tempus | --- | 10 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 40 | --- | ||
| Tf | Fall Tempus | --- | 35 | --- | ||
| Ciss | Input Capacitance | VDS= 30V , VGS= 0V , f=1MHz | --- | 2680 | --- | pF |
| Coss | Output Capacitance | --- | 386 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 160 | --- |
