WSD6060DN56 N-fluvium 60V 65A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD6060DN56 MOSFET est 60V, vena est 65A, resistentia est 7.5mΩ, alveus est N-cannel, sarcina est DFN5X6-8.
WINSOK MOSFET application areas
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WINSOK MOSFET respondet aliis numeris materialibus notam
STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitas | |
| Communia Ratings | ||||
| VDSS | Exhaurire-Source Voltage | 60 | V | |
| VGSS | Porta-Source Voltage | ±20 | V | |
| TJ | Maximum adiunctionis Temperature | 150 | °C | |
| TSTG | Repono Temperature Range | -55 ad 150 | °C | |
| IS | Diode Continua deinceps Current | Tc=25°C | 30 | A |
| ID | Continua Exhaurire Current | Tc=25°C | 65 | A |
| Tc= 70°C | 42 | |||
| I DM b | Exertus pulsus Current Exhaurire | Tc=25°C | 250 | A |
| PD | Maximam potestatem dissipatio | Tc=25°C | 62.5 | W |
| TC= 70°C | 38 | |||
| RqJL | Scelerisque resistentia adiunctae ad plumbum | Status stabilis | 2.1 | °C/W |
| RqJA | Scelerisque resistentia-adiunctae ad Ambientium | t £ 10s | 45 | °C/W |
| Status stabilisb | 50 | |||
| I AS d | Avalanche Current, Single pulsus | L=0.5mH | 18 | A |
| E AS d | NIVIS Energy, Una pulsus | L=0.5mH | 81 | mJ |
| Symbolum | Parameter | Tempestas Test | Min. | Typ. | Maximilianus. | Unitas | |
| Static Characteres | |||||||
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V, IDS= 250mA | 60 | - | - | V | |
| IDSS | Nulla porta Voltage Exhaurire Current | VDS= 48V, VGS= 0V | - | - | 1 | mA | |
| TJ= 85°C | - | - | 30 | ||||
| VGS(th) | Limen Voltage | VDS=VGS, EGODS= 250mA | 1.2 | 1.5 | 2.5 | V | |
| IGSS | Porta ultrices Current | VGS=±20V, VDS= 0V | - | - | ±100 | nA | |
| R DS(ON) 3 | Exhaurire Source De-statu resistentia | VGS= 10V, IDS= 20A | - | 7.5 | 10 | m W | |
| VGS= 4.5V, IDS=15 A | - | 10 | 15 | ||||
| Diode Characteres | |||||||
| V SD | Diode Deinceps intentione | ISD=1A, VGS= 0V | - | 0.75 | 1.2 | V | |
| trr | Tempus inversa Recuperatio | ISD= 20A, dlSD /dt=100A/µs | - | 42 | - | ns | |
| Qrr | Inversa Recuperatio præcipe | - | 36 | - | nC | ||
| Characteres dynamici3,4 | |||||||
| RG | Porta Resistentia | VGS=0V,VDS= 0V,F=1MHz | - | 1.5 | - | W | |
| Ciss | Input Capacitance | VGS=0V, VDS= 30V, F=1.0MHz Ω | - | 1340 | - | pF | |
| Coss | Output Capacitance | - | 270 | - | |||
| Crss | Reverse Transfer Capacitance | - | 40 | - | |||
| td (DE) | Turn-in mora Tempus | VDD=30V, IDS=1A, VGEN=10V, RG=6Ω. | - | 15 | - | ns | |
| tr | Turn, in Surge Tempus | - | 6 | - | |||
| td (ON) | Turn-off Mora Tempus | - | 33 | - | |||
| tf | Turn-off Fall Tempus | - | 30 | - | |||
| Porta Praecipe Characteres 3,4 | |||||||
| Qg | Totalis porta præcipe | VDS= 30V, VGS= 4.5V, IDS= 20A | - | 13 | - | nC | |
| Qg | Totalis porta præcipe | VDS=30V, VGS= 10V, IDS= 20A | - | 27 | - | ||
| Qnus | Limen porta præcipe | - | 4.1 | - | |||
| Qgs | Porta-Source Charge | - | 5 | - | |||
| Qgd | Porta-Exhaurire præcipe | - | 4.2 | - | |||
