WSD6060DN56 N-fluvium 60V 65A DFN5X6-8 WINSOK MOSFET

WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET Featured Image

brevis descriptio:

Pars NumberWSD6060DN56

BVDSS：60V

ID：65A

RDSON：7.5mΩ

Channel：N-cannel

sarcina：DFN5X6-8

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WINSOK MOSFET productum overview

Voltatio WSD6060DN56 MOSFET est 60V, vena est 65A, resistentia est 7.5mΩ, alveus est N-cannel, sarcina est DFN5X6-8.

WINSOK MOSFET application areas

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WINSOK MOSFET respondet aliis numeris materialibus notam

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

MOSFET parametri

Symbolum	Parameter		Rating	Unitas
Communia Ratings
VDSS	Exhaurire-Source Voltage		60	V
VGSS	Porta-Source Voltage		±20	V
T_J	Maximum adiunctionis Temperature		150	°C
TSTG	Repono Temperature Range		-55 ad 150	°C
I_S	Diode Continua deinceps Current	T_c=25°C	30	A
ID	Continua Exhaurire Current	T_c=25°C	65	A
ID	Continua Exhaurire Current	T_c= 70°C	42	A
I DM b	Exertus pulsus Current Exhaurire	T_c=25°C	250	A
P_D	Maximam potestatem dissipatio	T_c=25°C	62.5	W
P_D	Maximam potestatem dissipatio	T_C= 70°C	38	W
R_qJL	Scelerisque resistentia adiunctae ad plumbum	Stabilis publica	2.1	°C/W
RqJA	Scelerisque resistentia-adiunctae ad Ambientium	t £ 10s	45	°C/W
RqJA	Scelerisque resistentia-adiunctae ad Ambientium	Stabilis publica^b	50	°C/W
I AS^d	Avalanche Current, Single pulsus	L=0.5mH	18	A
E AS d	NIVIS Energy, Una pulsus	L=0.5mH	81	mJ

Symbolum	Parameter	Tempestas test		Min.	Typ.	Maximilianus.	Unitas
Static Characteres
BV_DSS	Exhaurire-Source Naufragii Voltage	V_GS=0V, I_DS= 250mA		60	-	-	V
IDSS	Nulla porta Voltage Exhaurire Current	V_DS= 48V, V_GS= 0V		-	-	1	mA
IDSS	Nulla porta Voltage Exhaurire Current						mA
			T_J= 85°C	-	-	30
VGS(th)	Limen Voltage	V_DS=V_GS, I_DS= 250mA		1.2	1.5	2.5	V
IGSS	Porta ultrices Current	V_GS=±20V, V_DS= 0V		-	-	±100	nA
R DS(ON) 3	Exhaurire Source De-statu resistentia	V_GS= 10V, I_DS= 20A		-	7.5	10	m W
R DS(ON) 3	Exhaurire Source De-statu resistentia	V_GS= 4.5V, I_DS=15 A		-	10	15	m W
Diode Characteres
V SD	Diode Deinceps intentione	I_SD=1A, V_GS= 0V		-	0.75	1.2	V
t_rr	Tempus inversa Recuperatio	I_SD= 20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Inversa Recuperatio præcipe	I_SD= 20A, dl_SD/dt=100A/µs		-	36	-	nC
Characteres dynamici^3,4
R_G	Porta Resistentia	V_GS=0V,V_DS= 0V,F=1MHz		-	1.5	-	W
C_iss	Input Capacitance	V_GS=0V, V_DS= 30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Output Capacitance			-	270	-
C_rss	Reverse Transfer Capacitance			-	40	-
td (DE)	Turn-in mora Tempus	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Turn, in Surge Tempus			-	6	-
td (ON)	Turn-off Mora Tempus			-	33	-
t_f	Turn-off Fall Tempus			-	30	-
Porta Praecipe Characteres ^3,4
Q_g	Totalis porta præcipe	V_DS= 30V, V_GS= 4.5V, I_DS= 20A		-	13	-	nC
Q_g	Totalis porta præcipe	V_DS=30V, V_GS= 10V, I_DS= 20A		-	27	-
Q_nus	Limen porta præcipe			-	4.1	-
Q_gs	Porta-Source Charge			-	5	-
Q_gd	Porta-Exhaurire præcipe			-	4.2	-