WSD6040DN56 N-fluvium 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD6040DN56 MOSFET est 60V, vena est 36A, resistentia est 14mΩ, alveus est N-canale, sarcina DFN5X6-8.
WINSOK MOSFET application areas
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WINSOK MOSFET respondet aliis numeris materialibus notam
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates | ||
| VDS | Exhaurire-Source Voltage | 60 | V | ||
| VGS | Porta-Source Voltage | ±20 | V | ||
| ID | Continua Exhaurire Current | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Continua Exhaurire Current | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | Exhaurire Current Pulsed | TC=25°C | 140 | A | |
| PD | Maximam potestatem dissipatio | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Maximam potestatem dissipatio | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | Avalanche Current, Single pulsus | L=0.5mH | 16 | A | |
| EASc | Unum pulsum NIVIS Energy | L=0.5mH | 64 | mJ | |
| IS | Diode Continua deinceps Current | TC=25°C | 18 | A | |
| TJ | Maximum adiunctionis Temperature | 150 | ℃ | ||
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ | ||
| RθJAb | Scelerisque resistentia adiunctae ad ambientium | Status stabilis | 60 | ℃/W | |
| RθJC | Scelerisque resistentia adiunctae ad Case | Status stabilis | 3.3 | ℃/W | |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas | |
| Static | |||||||
| V(BR)DSS | Exhaurire-Source Naufragii Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Nulla porta Voltage Exhaurire Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ= 85°C | 30 | ||||||
| IGSS | Porta ultrices Current | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| De Characteribus | |||||||
| VGS(TH) | Limen Voltage | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS (on)d | Exhaurire Source De-statu resistentia | VGS = 10V, ID = 25A . | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Switching | |||||||
| Qg | Totalis porta præcipe | VDS=30V VGS=10V ID=25A | 42 | nC | |||
| Qgs | Porta-Sour Crimen | 6.4 | nC | ||||
| Qgd | Porta-Exhaurire præcipe | 9.6 | nC | ||||
| td (on) | Turn-in mora Tempus | VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω | 17 | ns | |||
| tr | Turn, in Surge Tempus | 9 | ns | ||||
| td (off) | Turn-off Mora Tempus | 58 | ns | ||||
| tf | Turn-off Fall Tempus | 14 | ns | ||||
| Rg | Gai resistentia | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Dynamic | |||||||
| Ciss | In Capacitance | VGS=0V VDS=30V f=1MHz | 2100 | pF | |||
| Coss | Ex Capacitance | 140 | pF | ||||
| Crss | Reverse Transfer Capacitance | 100 | pF | ||||
| Exhaurire Source Diode Characteres et Maximum Ratings | |||||||
| IS | Continua Source Current | VG=VD=0V , Force Current | 18 | A | |||
| ISM | Pulsed Source Current3 | 35 | A | ||||
| VSDd | Diode Deinceps intentione | ISD = 20A , VGS=0V | 0.8 | 1.3 | V | ||
| trr* | Tempus inversa Recuperatio | ISD=25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Inversa Recuperatio præcipe | 33 | nC | ||||
