WSD50P10DN56 WSD50P10ADN56 P channel -100V -34A DFN5X6-8 WINSOK MOSFET

WSD50P10DN56 WSD50P10ADN56 P alveum -100V -34A DFN5X6-8 WINSOK MOSFET Featured Image

brevis descriptio:

Pars NumberWSD50P10DN56 WSD50P10ADN56

BVDSS：-100V

ID：-34A

RDSON：32mΩ

Channel：P-cannel

sarcina：DFN5X6-8

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WINSOK MOSFET productum overview

Voltatio WSD50P10DN56 WSD50P10ADN56 MOSFET est -100V, hodierna est -34A, resistentia est 32mΩ, alveus est P-alveus, sarcina DFN5X6-8.

WINSOK MOSFET application areas

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WINSOK MOSFET respondet aliis numeris materialibus notam

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MOSFET parametri

Pars numerus	Configurationis	Type	VDS	VGS	ID (A)	RDS(ON)(mΩ)						RDS(ON)(mΩ)				Ciss	sarcina
			VDS	VGS	ID (A)	@10V		@6V		@4.5V		@2.5V		@1.8V		Ciss
			(V)	±(V)	Maximilianus.	Typ.	Maximilianus.	Typ.	Maximilianus.	Typ.	Maximilianus.	Typ.	Maximilianus.	Typ.	Maximilianus.	(pF)

WSD50P10DN56	Unius	P-Ch	-100	20	-34	32	40	-	-	38	51	-	-	-	-	2480	DFN5X6-8
WSD50P10ADN56	Unius	P-Ch	-100	20	-40	62	81	-	-	-	-	-	-	-	-	2590	DFN5X6-8