WSD45N10GDN56 N alveum 100V 45A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD45N10GDN56 MOSFET est 100V, vena est 45A, resistentia est 14.5mΩ, alveus est N-alveus, sarcina DFN5X6-8.
WINSOK MOSFET application areas
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WINSOK MOSFET respondet aliis numeris materialibus notam
AOS MOSFET AON6226,AON6294,AON6298,AONS6292, AONS6692, AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 100 | V |
| VGS | Porta-Source intentione | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS@ 10V | 45 | A |
| ID@TC= 100℃ | Continua Exhaurire Current, VGS@ 10V | 33 | A |
| ID@TA=25℃ | Continua Exhaurire Current, VGS@ 10V | 12 | A |
| ID@TA= 70℃ | Continua Exhaurire Current, VGS@ 10V | 9.6 | A |
| IDMa | Exhaurire Current Pulsed | 130 | A |
| EASb | Unum pulsum NIVIS Energy | 169 | mJ |
| IASb | NIVIS CASUS Current | 26 | A |
| PD@TC=25℃ | Totalis Power dissipatio | 95 | W |
| PD@TA=25℃ | Totalis Power dissipatio | 5.0 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, EGOD= 1mA | --- | 0.0 | --- | V/℃ |
| RDS(ON)d | Static Drain-Source de Resistentia2 | VGS= 10V , ID=26A | --- | 14.5 | 17.5 | mΩ |
| VGS(th) | Limen Voltage | VGS=VDS, EGOD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (th) | VGS (th)Temperature Coefficient | --- | -5 | mV/℃ | ||
| IDSS | Exhaurire-Fource Leakage Current | VDS= 80V , VGS= 0V , TJ=25℃ | --- | - | 1 | uA |
| VDS= 80V , VGS= 0V , TJ= 55℃ | --- | - | 30 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | - | ±100 | nA |
| Rge | Porta Resistentia | VDS= 0V , VGS= 0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Totalis Porta præcipe (10V) | VDS= 50V , VGS= 10V , ID=26A | --- | 42 | 59 | nC |
| Qgse | Porta-Source Charge | --- | 12 | -- | ||
| Qgde | Porta-Exhaurire præcipe | --- | 12 | --- | ||
| Td (on)e | Turn-De mora Tempus | VDD= 30V , VGEN= 10V , RG=6Ω ID=1A ,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Surge Tempus | --- | 9 | 17 | ||
| Td (off)e | Turn-Off mora Tempus | --- | 36 | 65 | ||
| Tfe | Fall Tempus | --- | 22 | 40 | ||
| Cisse | Input Capacitance | VDS= 30V , VGS= 0V , f=1MHz | --- | 1800 | --- | pF |
| Cosse | Output Capacitance | --- | 215 | --- | ||
| Crsse | Reverse Transfer Capacitance | --- | 42 | --- |
