WSD4280DN22 Dual P alveum -15V -4.6A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD4280DN22 MOSFET est -15V, vena est -4.6A, resistentia est 47mΩ, alveus est Dual P-alveus, sarcina est DFN2X2-6L.
WINSOK MOSFET application areas
Interclusio bidirectional switch; DC-DC applicationes conversionis; Li-altilium incurrentes; E-cigarette MOSFET, electronicas MOSFET incurrentes, currus MOSFET, controller MOSFET, productum digitales MOSFET, parva familia adjumenta MOSFET, electronicas edax MOSFET.
WINSOK MOSFET respondet aliis numeris materialibus notam
PANJIT MOSFET PJQ2815
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | -15 | V |
| VGS | Porta-Source Voltage | ±8 | V |
| ID@Tc=25℃ | Continua Exhaurire Current, VGS= -4.5V1 | -4.6 | A |
| IDM | 300μS Exhaurire Pulsus Current, (VGS=-4.5V) | -15 | A |
| PD | Potestas dissipatio Dering supra TA = 25°C (Note 2) | 1.9 | W |
| TSTG,TJ | Repono Temperature Range | -55 ad 150 | ℃ |
| RθJA | Scelerisque resistentia adiunctae-ambientium1 | 65 | /W |
| RθJC | Scelerisque Repugnantia adiunctae-Case1 | 50 | /W |
Characteres electrici (TJ=25 , nisi aliud notentur)
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= -250uA | -15 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, I .D= -1mA | --- | -0.01 | --- | V/℃ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS= -4.5V , ID= -1A | --- | 47 | 61 | mΩ |
| VGS= -2.5V , ID= -1A | --- | 61 | 80 | |||
| VGS= -1.8V , ID= -1A | --- | 90 | 150 | |||
| VGS(th) | Limen Voltage | VGS=VDS, ID= -250uA | -0.4 | -0.62 | -1.2 | V |
| VGS (th) | VGS (th)Temperature Coefficient | --- | 3.13 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS= -10V , VGS= 0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS= -10V , VGS= 0V , TJ= 55℃ | --- | --- | -5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±12V , VDS= 0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS= -5V , ID= -1A | --- | 10 | --- | S |
| Rg | Porta Resistentia | VDS= 0V , VGS= 0V , f=1MHz | --- | 2 | --- | Ω |
| Qg | Totalis portae incurrens (-4.5V) | VDS= -10V , VGS= -4.5V , ID=-4.6A | --- | 9.5 | --- | nC |
| Qgs | Porta-Source Charge | --- | 1.4 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 2.3 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= -10V ,VGS= -4.5V , RG= 1Ω ID=-3.9A, | --- | 15 | --- | ns |
| Tr | Surge Tempus | --- | 16 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 30 | --- | ||
| Tf | Fall Tempus | --- | 10 | --- | ||
| Ciss | Input Capacitance | VDS= -10V , VGS= 0V , f=1MHz | --- | 781 | --- | pF |
| Coss | Output Capacitance | --- | 98 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 96 | --- |
