WSD4098 Dual N-Channel 40V 22A DFN5*6-8 WINSOK MOSFET

brevis descriptio:

Haec wireless magneticae potentiae ripam est quae telephonicas Apple automatice cognoscit et activationem globulorum non requirit. 2.0/QC3.0/PA2.0/PD3.0/SCP/AFC initus et output celeriter incurrentes protocolla integrat. Wireless potentia est ripae productum quae compatitur cum Apple/Samsung mobile phone synchronum boost/gradum convertentium, Li altilium præcipiens administrationem, tubum digitalis potentiae indicationem, magneticum wireless præcipientem et alia munera.

Exemplar Number:WSD4098

BVDSS:40V

RDSON:7.8mΩ

ID:22A

Channel:Dual N-Channel

Sarcina:DFN5*6-8

Breviarium productum:Voltatio WSD4098 MOSFET est 40V, hodierna est22A, resistentia est 7.8mΩ, canalis est Dual N-Channel, et sarcina est DFN5*6-8.

Applicationes:E-cigarettes, accessiones wireless, motores fuci, curas medicas, currus dextrarios, moderatores, productos digitales, parvas familias adjumenta, electronicas consumere.

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Product Detail

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Product Tags

General Description

The WSD4098DN56 est summa operandi fossam Dual N-Ch MOSFET cum densitate summa alta, quae praecellens RDSON et portae curam praebent plerisque applicationibus synchronis hirci convertentis. WSD4098DN56 obviam RoHS et Viridis Productum postulationem 100% EAS cum plena functione fidelitatis probata praestari.

Features

Provectus cellula densitas fossae altae technologiae, Eximius portae Low Praecipe, Praeclara CdV/dt effectus declinationis, 100% EAS Guarantee, Available Green Fabrica

Applications

High Frequency Point-of-Load Synchronum,Buck Converter for MB/NB/UMPC/VGA,Networking DC-DC Power System, Load Switch, E-cigarettes, wireless praecipientes, motores fuci, curas medicas, phialas currus, moderatores digitales products, parva familia adjumenta, dolor eu nisl.

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Magna parametri

Symbolum	Parameter		Rating	Unitas
Communia Ratings
VDSS	Exhaurire-Source Voltage		40	V
VGSS	Porta-Source Voltage		±20	V
TJ	Maximum adiunctionis Temperature		150	°C
TSTG	Repono Temperature Range		-55 ad 150	°C
IS	Diode Continua deinceps Current	TA=25°C	11.4	A
ID	Continua Exhaurire Current	TA=25°C	22	A
ID	Continua Exhaurire Current			A
		TA=70°C	22
I DM b	Exertus pulsus Current Exhaurire	TA=25°C	88	A
PD	Maximam potestatem dissipatio	T. =25°C	25	W
PD	Maximam potestatem dissipatio	TC=70°C	10	W
RqJL	Scelerisque resistentia adiunctae ad plumbum	Stabilis publica	5	°C/W
RqJA	Scelerisque resistentia-adiunctae ad Ambientium	t£ 10s	45	°C/W
RqJA	Scelerisque resistentia-adiunctae ad Ambientium	Stabilis rei publicae b *	90	°C/W
I AS d*	Avalanche Current, Single pulsus	L=0.5mH	28	A
E AS d	NIVIS Energy, Una pulsus	L=0.5mH	39.2	mJ

Symbolum	Parameter	Tempestas test		Min.	Typ.	Maximilianus.	Unitas
Static Characteres
BVDSS	Exhaurire-Source Naufragii Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Nulla porta Voltage Exhaurire Current	VDS=32V, VGS=0V		-	-	1	mA
IDSS	Nulla porta Voltage Exhaurire Current						mA
			TJ=85°C	-	-	30
VGS(th)	Limen Voltage	VDS=VGS, IDS=250mA		1.2	1.8	2.5	V
IGSS	Porta ultrices Current	VGS=±20V, VDS=0V		-	-	±100	nA
R DS(ON) e	Exhaurire Source De-statu resistentia	VGS=10V, IDS=14A		-	6.8	7.8	m W *
R DS(ON) e	Exhaurire Source De-statu resistentia	VGS=4.5V, IDS=12 A		-	9.0	11	m W *
Diode Characteres
V SD e	Diode Deinceps intentione	ISD=1A, VGS=0V		-	0.75	1.1	V
trr*	Tempus inversa Recuperatio	ISD=20A, dlSD /dt=100A/µs		-	23	-	ns
Qrr	Inversa Recuperatio præcipe	ISD=20A, dlSD /dt=100A/µs		-	13	-	nC
Characteres Dynamici f
RG	Porta Resistentia	VGS=0V,VDS=0V,F=1MHz		-	2.5	-	W
Ciss	Input Capacitance	VGS=0V, VDS=20V, Frequentia=1.0MHz		-	1370	1781	pF
Coss	Output Capacitance			-	317	-
Crss	Reverse Transfer Capacitance			-	96	-
td (DE)	Turn-in mora Tempus	VDD = 20V, RL=20W, IDS=1A, VGEN=10V, RG=6W		-	13.8	-	ns
tr	Turn, in Surge Tempus			-	8	-
td (ON)	Turn-off Mora Tempus			-	30	-
tf	Turn-off Fall Tempus			-	21	-
Porta Praecipe Characteres f
Qg	Totalis porta præcipe	VDS=20V, VGS=10V, IDS=6A		-	23	28	nC
Qg	Totalis porta præcipe	VDS=20V, VGS=4.5V, IDS=6A		-	22	-
Qgth	Limen porta præcipe			-	2.6	-
Qgs	Porta-Source Charge			-	4.7	-
Qgd	Porta-Exhaurire præcipe			-	3	-