WSD4076DN56 N-fluvium 40V 76A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD4076DN56 MOSFET est 40V, vena est 76A, resistentia est 6.9mΩ, alveus est N-cannel, sarcina est DFN5X6-8.
WINSOK MOSFET application areas
Adjumenta parva MOSFET, adjumenta tractavit MOSFET, motoria MOSFET.
WINSOK MOSFET respondet aliis numeris materialibus notam
STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.
PANJIT MOSFET PJQ5442.
POTENS Semiconductor MOSFET PDC496X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 40 | V |
| VGS | Porta-Source intentione | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS@ 10V | 76 | A |
| ID@TC= 100℃ | Continua Exhaurire Current, VGS@ 10V | 33 | A |
| IDM | Exhaurire Current Pulseda | 125 | A |
| EAS | Unum pulsum NIVIS Energyb | 31 | mJ |
| IAS | NIVIS CASUS Current | 31 | A |
| PD@Ta=25℃ | Totalis Power dissipatio | 1.7 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Ad 25℃, EGOD= 1mA | --- | 0.041 | --- | V/℃ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=10V , ID= 12A | --- | 6.9 | 8.5 | mΩ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=4.5V , ID= 10A | --- | 10 | 15 | mΩ |
| VGS(th) | Limen Voltage | VGS=VDS, EGOD= 250uA | 1.5 | 1.6 | 2.5 | V |
| △VGS(th) | VGS (th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 32V , VGS= 0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS= 32V , VGS= 0V , TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS= 5V , ID= 20A | --- | 18 | --- | S |
| Rg | Porta Resistentia | VDS= 0V , VGS= 0V , f=1MHz | --- | 1.7 | --- | Ω |
| Qg | Totalis Porta præcipe (10V) | VDS= 20V , VGS= 4.5V , ID= 12A | --- | 5.8 | --- | nC |
| Qgs | Porta-Source Charge | --- | 3.0 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 1.2 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= 15V , VGEN= 10V , RG= 3.3Ω, EGOD=1A . | --- | 12 | --- | ns |
| Tr | Surge Tempus | --- | 5.6 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 20 | --- | ||
| Tf | Fall Tempus | --- | 11 | --- | ||
| Ciss | Input Capacitance | VDS= 15V , VGS= 0V , f=1MHz | --- | 680 | --- | pF |
| Coss | Output Capacitance | --- | 185 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 38 | --- |
