WSD4076DN56 N-fluvium 40V 76A DFN5X6-8 WINSOK MOSFET

products

WSD4076DN56 N-fluvium 40V 76A DFN5X6-8 WINSOK MOSFET

brevis descriptio:

Pars NumberWSD4076DN56

BVDSS:40V

ID:76A

RDSON:6.9mΩ 

Channel:N-cannel

sarcina:DFN5X6-8


Product Detail

Applicationem

Product Tags

WINSOK MOSFET productum overview

Voltatio WSD4076DN56 MOSFET est 40V, vena est 76A, resistentia est 6.9mΩ, alveus est N-alveus, sarcina est DFN5X6-8.

WINSOK MOSFET application areas

Adjumenta parva MOSFET, adjumenta tractavit MOSFET, motoria MOSFET.

WINSOK MOSFET respondet aliis numeris materialibus notam

STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.

PANJIT MOSFET PJQ5442.

POTENS Semiconductor MOSFET PDC496X.

MOSFET parametri

Symbolum

Parameter

Rating

Unitates

VDS

Exhaurire-Source Voltage

40

V

VGS

Porta-Source intentione

±20

V

ID@TC=25

Continua Exhaurire Current, VGS@ 10V

76

A

ID@TC= 100

Continua Exhaurire Current, VGS@ 10V

33

A

IDM

Exhaurire Current Pulseda

125

A

EAS

Unum pulsum NIVIS Energyb

31

mJ

IAS

NIVIS CASUS Current

31

A

PD@Ta=25

Totalis Power dissipatio

1.7

W

TSTG

Repono Temperature Range

-55 ad 150

TJ

Temperature Range Junction operating

-55 ad 150

 

Symbolum

Parameter

Conditiones

Min.

Typ.

Maximilianus.

Unitas

BVDSS

Exhaurire-Source Naufragii Voltage VGS= 0V , ID= 250uA

40

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Ad 25, ID= 1mA

---

0.041

---

V/

RDS(ON)

Static Drain-Source de Resistentia2 VGS=10V , ID= 12A

---

6.9

8.5

mΩ

RDS(ON)

Static Drain-Source de Resistentia2 VGS=4.5V , ID= 10A

---

10

15

VGS(th)

Limen Voltage VGS=VDS, ID= 250uA

1.5

1.6

2.5

V

VGS(th)

VGS (th)Temperature Coefficient

---

-6.94

---

mV/

IDSS

Exhaurire-Fource Leakage Current VDS= 32V , VGS= 0V , TJ=25

---

---

2

uA

VDS= 32V , VGS= 0V , TJ= 55

---

---

10

IGSS

Porta-Source ultrices Current VGS=±20V , VDS= 0V

---

---

±100

nA

gfs *

Transconductance transmittere VDS= 5V , ID= 20A

---

18

---

S

Rg

Porta Resistentia VDS= 0V , VGS= 0V , f=1MHz

---

1.7

---

Ω

Qg

Totalis Porta præcipe (10V) VDS= 20V , VGS= 4.5V , ID= 12A

---

5.8

---

nC

Qgs

Porta-Source Charge

---

3.0

---

Qgd

Porta-Exhaurire præcipe

---

1.2

---

Td (on)

Turn-De mora Tempus VDD= 15V , VGEN= 10V , RG= 3.3Ω, ID=1A .

---

12

---

ns

Tr

Surge Tempus

---

5.6

---

Td (off)

Turn-Off mora Tempus

---

20

---

Tf

Fall Tempus

---

11

---

Ciss

Input Capacitance VDS= 15V , VGS= 0V , f=1MHz

---

680

---

pF

Coss

Output Capacitance

---

185

---

Crss

Reverse Transfer Capacitance

---

38

---


  • Priora:
  • Next:

  • Epistulam tuam hic scribe et mitte nobis