WSD4018DN22 P alveum -40V -18A DFN2X2-6L WINSOK MOSFET

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WSD4018DN22 P alveum -40V -18A DFN2X2-6L WINSOK MOSFET

Description:

Pars NumberWSD4018DN22

BVDSS:-40V

ID:-18A

RDSON:26mΩ 

Channel:P-cannel

sarcina:DFN2X2-6L


Product Detail

Applicationem

Product Tags

WINSOK MOSFET productum overview

Voltatio WSD4018DN22 MOSFET est -40V, vena est -18A, resistentia est 26mΩ, canalis est P-alveus, sarcina est DFN2X2-6L.

WINSOK MOSFET application areas

Provectus altam cellam densitatem fossae technologiae, super portam Lower incurrens, Praeclara Cdv/dt effectus declinationem Viridis Fabricae Available, Facies agnitionis instrumenti MOSFET, e-cigarette MOSFET, parvae domus adjumenta MOSFET, currus disco MOSFET.

WINSOK MOSFET respondet aliis numeris materialibus notam

AOS MOSFET AON2409, POTENT MOSFET PDB3909L

MOSFET parametri

Symbolum

Parameter

Rating

Unitates

VDS

Exhaurire-Source Voltage

-40

V

VGS

Porta-Source Voltage

±20

V

ID@Tc=25℃

Continua Exhaurire Current, VGS@ -10V1

-18

A

ID@Tc= 70℃

Continua Exhaurire Current, VGS@ -10V1

-14.6

A

IDM

300μS Exhaurire Pulsus Current, VGS=-4.5V2

54

A

PD@Tc=25℃

Totalis Power dissipatio3

19

W

TSTG

Repono Temperature Range

-55 ad 150

TJ

Temperature Range Junction operating

-55 ad 150

Characteres electrici (TJ=25 , nisi aliud notentur)

Symbolum

Parameter

Conditiones

Min.

Typ.

Maximilianus.

Unitas

BVDSS

Exhaurire-Source Naufragii Voltage VGS= 0V , ID= -250uA

-40

---

---

V

BVDSS/△TJ

BVDSS Temperature Coefficient Ad 25℃, I .D= -1mA

---

-0.01

---

V/℃

RDS(ON)

Static Drain-Source de Resistentia2 VGS= -10V , ID= -8.0A

---

26

34

VGS= -4.5V , ID= -6.0A

---

31

42

VGS(th)

Limen Voltage VGS=VDS, EGOD= -250uA

-1.0

-1.5

-3.0

V

VGS (th)

VGS (th)Temperature Coefficient

---

3.13

---

mV/℃

IDSS

Exhaurire-Fource Leakage Current VDS=-40V, VGS= 0V , TJ=25℃

---

---

-1

uA

VDS=-40V, VGS= 0V , TJ= 55℃

---

---

-5

IGSS

Porta-Source ultrices Current VGS=±20V , VDS= 0V

---

---

±100

nA

Qg

Totalis portae incurrens (-4.5V) VDS= 20V , VGS= -10V , ID= -1.5A

---

27

---

nC

Qgs

Porta-Source Charge

---

2.5

---

Qgd

Porta-Exhaurire præcipe

---

6.7

---

Td (on)

Turn-De mora Tempus VDD= 20V , VGS= -10V ,RG=3Ω , RL=10Ω

---

9.8

---

ns

Tr

Surge Tempus

---

11

---

Td (off)

Turn-Off mora Tempus

---

54

---

Tf

Fall Tempus

---

7.1

---

Ciss

Input Capacitance VDS= 20V , VGS= 0V , f=1MHz

---

1560

---

pF

Coss

Output Capacitance

---

116

---

Crss

Reverse Transfer Capacitance

---

97

---


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