WSD40120DN56 N - alveum 40V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD40120DN56 MOSFET est 40V, hodierna est 120A, resistentia est 1.85mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.
WINSOK MOSFET application areas
E-cigarettes MOSFET, notas wireless MOSFET, fucos MOSFET, curas medicas MOSFET, car- cusas MOSFET, moderatores MOSFET, productos digitales MOSFET, parvas familias adjumenta MOSFET, dolor electronics MOSFET.
WINSOK MOSFET respondet aliis numeris materialibus notam
AOS MOSFET AON6234,AON6232,AON623.Onsemi, FAIRCHIS MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF6AG.NXP MOSFET PH484S.TOSHIBA MOSFET TPH484S.TOSHIBA MOSFET TPH4S.TOSHIBA MOSFET TPH4S. PJQ544.NIKO-SEM MOSFET PKCSBB.POTENS Semiconductor MOSFET PDC496X.
MOSFET parametri
Symbolum | Parameter | Rating | Unitates |
VDS | Exhaurire-Source Voltage | 40 | V |
VGS | Porta-Source intentione | ±20 | V |
ID@TC=25℃ | Continua Exhaurire Current, VGS@ 10V1,7 | 120 | A |
ID@TC= 100℃ | Continua Exhaurire Current, VGS@ 10V1,7 | 100 | A |
IDM | Exhaurire Current Pulsed2 | 400 | A |
EAS | Unum pulsum NIVIS Energy3 | 240 | mJ |
IAS | NIVIS CASUS Current | 31 | A |
PD@TC=25℃ | Totalis Power dissipatio4 | 104 | W |
TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 40 | --- | --- | V |
△BVDSS/△TJ | BVDSSTemperature Coefficient | Ad 25℃, ID= 1mA | --- | 0.041 | --- | V/℃ |
RDS(ON) | Static Drain-Source de Resistentia2 | VGS=10V , ID= 30A | --- | 1.85 | 2.4 | mΩ |
RDS(ON) | Static Drain-Source de Resistentia2 | VGS=4.5V , ID= 20A | --- | 2.5 | 3.3 | mΩ |
VGS(th) | Limen Voltage | VGS=VDS, ID= 250uA | 1.5 | 1.8 | 2.5 | V |
△VGS (th) | VGS (th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
IDSS | Exhaurire-Fource Leakage Current | VDS= 32V , VGS= 0V , TJ=25℃ | --- | --- | 2 | uA |
VDS= 32V , VGS= 0V , TJ= 55℃ | --- | --- | 10 | |||
IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
gfs * | Transconductance transmittere | VDS= 5V , ID= 20A | --- | 55 | --- | S |
Rg | Porta Resistentia | VDS= 0V , VGS= 0V , f=1MHz | --- | 1.1 | 2 | Ω |
Qg | Totalis Porta præcipe (10V) | VDS= 20V , VGS= 10V , ID= 10A | --- | 76 | 91 | nC |
Qgs | Porta-Source Charge | --- | 12 | 14.4 | ||
Qgd | Porta-Exhaurire præcipe | --- | 15.5 | 18.6 | ||
Td (on) | Turn-De mora Tempus | VDD= 30V , VGEN= 10V , RG=1Ω, ID=1A RL=15Ω. | --- | 20 | 24 | ns |
Tr | Surge Tempus | --- | 10 | 12 | ||
Td (off) | Turn-Off mora Tempus | --- | 58 | 69 | ||
Tf | Fall Tempus | --- | 34 | 40 | ||
Ciss | Input Capacitance | VDS= 20V , VGS= 0V , f=1MHz | --- | 4350 | --- | pF |
Coss | Output Capacitance | --- | 690 | --- | ||
Crss | Reverse Transfer Capacitance | --- | 370 | --- |