WSD40120DN56 N - alveum 40V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD40120DN56 MOSFET est 40V, hodierna est 120A, resistentia est 1.85mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.
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WINSOK MOSFET respondet aliis numeris materialibus notam
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MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 40 | V |
| VGS | Porta-Source intentione | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS@ 10V1,7 | 120 | A |
| ID@TC= 100℃ | Continua Exhaurire Current, VGS@ 10V1,7 | 100 | A |
| IDM | Exhaurire Current Pulsed2 | 400 | A |
| EAS | Unum pulsum NIVIS Energy3 | 240 | mJ |
| IAS | NIVIS CASUS Current | 31 | A |
| PD@TC=25℃ | Totalis Power dissipatio4 | 104 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Ad 25℃, ID= 1mA | --- | 0.041 | --- | V/℃ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=10V , ID= 30A | --- | 1.85 | 2.4 | mΩ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=4.5V , ID= 20A | --- | 2.5 | 3.3 | mΩ |
| VGS(th) | Limen Voltage | VGS=VDS, ID= 250uA | 1.5 | 1.8 | 2.5 | V |
| △VGS (th) | VGS (th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 32V , VGS= 0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS= 32V , VGS= 0V , TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS= 5V , ID= 20A | --- | 55 | --- | S |
| Rg | Porta Resistentia | VDS= 0V , VGS= 0V , f=1MHz | --- | 1.1 | 2 | Ω |
| Qg | Totalis Porta præcipe (10V) | VDS= 20V , VGS= 10V , ID= 10A | --- | 76 | 91 | nC |
| Qgs | Porta-Source Charge | --- | 12 | 14.4 | ||
| Qgd | Porta-Exhaurire præcipe | --- | 15.5 | 18.6 | ||
| Td (on) | Turn-De mora Tempus | VDD= 30V , VGEN= 10V , RG=1Ω, ID=1A RL=15Ω. | --- | 20 | 24 | ns |
| Tr | Surge Tempus | --- | 10 | 12 | ||
| Td (off) | Turn-Off mora Tempus | --- | 58 | 69 | ||
| Tf | Fall Tempus | --- | 34 | 40 | ||
| Ciss | Input Capacitance | VDS= 20V , VGS= 0V , f=1MHz | --- | 4350 | --- | pF |
| Coss | Output Capacitance | --- | 690 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 370 | --- |
