WSD40110DN56G N-alvum 40V 110A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD4080DN56 MOSFET est 40V, hodierna est 85A, resistentia est 4.5mΩ, canalis est N-alveus, sarcina DFN5X6-8 est.
WINSOK MOSFET application areas
Adjumenta parva MOSFET, adjumenta tractavit MOSFET, motoria MOSFET.
WINSOK MOSFET respondet aliis numeris materialibus notam
AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 40 | V |
| VGS | Porta-Source intentione | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS @ 10V1 | 85 | A |
| ID@TC= 100℃ | Continua Exhaurire Current, VGS @ 10V1 | 58 | A |
| IDM | Exhaurire Current Pulsed2 | 100 | A |
| EAS | Unum pulsum NIVIS Energy3 | 110.5 | mJ |
| IAS | NIVIS CASUS Current | 47 | A |
| PD@TC=25℃ | Totalis Power dissipatio4 | 52.1 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| RθJA | Scelerisque resistentia adiunctae-Ambient1 | 62 | ℃/W |
| RθJC | Scelerisque Repugnantia adiunctae-Case1 | 2.4 | ℃/W |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=10V , ID=10A | --- | 4.5 | 6.5 | mΩ |
| VGS=4.5V , ID=5A | --- | 6.4 | 8.5 | |||
| VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 1.0 | --- | 2.5 | V |
| IDSS | Exhaurire-Fource Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS=10V , ID=5A | --- | 27 | --- | S |
| Qg | Totalis Porta Praecipe (4.5V) | VDS=20V , VGS=4.5V , ID=10A | --- | 20 | --- | nC |
| Qgs | Porta-Source Charge | --- | 5.8 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 9.5 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=15V , VGS=10V RG=3.3Ω ID=1A | --- | 15.2 | --- | ns |
| Tr | Surge Tempus | --- | 8.8 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 74 | --- | ||
| Tf | Fall Tempus | --- | 7 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 2354 | --- | pF |
| Coss | Output Capacitance | --- | 215 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 175 | --- | ||
| IS | Continua Source Current1,5 | VG=VD= 0V , Force Current | --- | --- | 70 | A |
| VSD | Diode Deinceps intentione2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |
