WSD30L88DN56 Dual P alveum -30V -49A DFN5*6-8 WINSOK MOSFET

brevis descriptio:

Exemplar Number:WSD30L88DN56

BVDSS:30V

RDSON:11.5mΩ

ID:-49A

Channel:Dual P-cannel

Sarcina:DFN5*6-8

Breviarium productum:Voltatio WSD30L88DN56 MOSFET est -30V, vena est-49A, resistentia est 11.5mΩ, alveus est Dual P-alveus, sarcina DFN5*6-8.

Applicationes:E-cigarettes, accessiones wireless, motores fuci, curas medicas, currus dextrarios, moderatores, productos digitales, parvas familias adjumenta, electronicas consumere.

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General Description

The WSD30L88DN56 est fossam perficiendi summa Dual P-Ch MOSFET cum densitate celsa ultima, quae RDSON et portae praefectum praestantissimum praebent applicationibus synchronis hirci convertentis. WSD30L88DN56 obviam RoHS et Viridis Productum postulationem 100% EAS cum plena functione certa probata praestatione.

Features

Provectus cellulae densitatis fossae altae technologiae Super portae inferioris praecipe -CdV/dt effectus declinationis -100% EAS Guarantee - Invicta viridis Available.

Applications

High Frequency Point-of-Load Synchronous，Buck Converter for MB/NB/UMPC/VGA，Networking DC-DC Power System，Load Switch，E-cigarettes, wireless praecipientes, motores fucos, curas medicas, phialas currus, moderatores digitales products, parva familia adjumenta, dolor eu nisl.

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AOS

Magna parametri

Symbolum	Parameter	Rating	Unitates
VDS	Exhaurire-Source Voltage	-30	V
VGS	Porta-Source Voltage	±20	V
ID@TC=25℃	Continua Exhaurire Current, VGS @ -10V1	-49	A
ID@TC=100℃	Continua Exhaurire Current, VGS @ -10V1	-23	A
IDM	Exhaurire Pulsed Current2	-120	A
EAS	Unum pulsum NIVIS Energy3	68	mJ
PD@TC=25℃	Totalis potentiae Dissipation4	40	W
TSTG	Repono Temperature Range	-55 ad 150	℃
TJ	Temperature Range Junction operating	-55 ad 150	℃