WSD30300DN56G N alveum 30V 300A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD20100DN56 MOSFET est 20V, hodierna est 90A, resistentia est 1.6mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.
WINSOK MOSFET application areas
Electronic sigarella MOSFET, fuci MOSFET, instrumenta electrica MOSFET, fascia tormenta MOSFET, PD MOSFET, parva adjumenta domus MOSFET.
WINSOK MOSFET respondet aliis numeris materialibus notam
AOS MOSFET AON6572.
POTENS Semiconductor MOSFET PDC394X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 20 | V |
| VGS | Porta-Source Voltage | ±12 | V |
| ID@TC=25℃ | Continua Exhaurire Current1 | 90 | A |
| ID@TC= 100℃ | Continua Exhaurire Current1 | 48 | A |
| IDM | Exhaurire Current Pulsed2 | 270 | A |
| EAS | Unum pulsum NIVIS Energy3 | 80 | mJ |
| IAS | NIVIS CASUS Current | 40 | A |
| PD@TC=25℃ | Totalis Power dissipatio4 | 83 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| RθJA | Scelerisque resistentia adiunctae-ambientium1(t≦10S) | 20 | ℃/W |
| RθJA | Scelerisque resistentia adiunctae-ambientium1(Status stabilis) | 55 | ℃/W |
| RθJC | Scelerisque Repugnantia adiunctae-casu1 | 1.5 | ℃/W |
| Symbolum | Parameter | Conditiones | Min | Typ | Max | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 20 | 23 | --- | V |
| VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 0.5 | 0.68 | 1.0 | V |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=10V , ID=20A | --- | 1.6 | 2.0 | mΩ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=4.5V , ID=20A | 1.9 | 2.5 | mΩ | |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS=2.5V , ID=20A | --- | 2.8 | 3.8 | mΩ |
| IDSS | Exhaurire-Fource Leakage Current | VDS=16V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V , VGS=0V , TJ=125℃ | --- | --- | 5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±10V , VDS=0V | --- | --- | ±10 | uA |
| Rg | Porta Resistentia | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Totalis Porta præcipe (10V) | VDS=15V , VGS=10V , ID=20A | --- | 77 | --- | nC |
| Qgs | Porta-Source Charge | --- | 8.7 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 14 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=15V , VGS=10V , RG=3 , ID=20A | --- | 10.2 | --- | ns |
| Tr | Surge Tempus | --- | 11.7 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 56.4 | --- | ||
| Tf | Fall Tempus | --- | 16.2 | --- | ||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 4307 | --- | pF |
| Coss | Output Capacitance | --- | 501 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 321 | --- | ||
| IS | Continua Source Current1,5 | VG=VD= 0V , Force Current | --- | --- | 50 | A |
| VSD | Diode Deinceps intentione2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
| trr* | Tempus inversa Recuperatio | IF=20A , di/dt=100A/μs , TJ=25℃ | --- | 22 | --- | nS |
| Qrr | Inversa Recuperatio præcipe | --- | 72 | --- | nC |
