WSD3023DN56 N-Ch et P-Cannel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

Description:

Exemplar Number:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Channel:N-Ch et P-Channel

Sarcina:DFN5*6-8

Breviarium productum:Voltatio WSD3023DN56 MOSFET est 30V/-30V, current est 14A/-12A, resistentia est 14mΩ/23mΩ, alveus est N-Ch et P-Channel, et sarcina est DFN5*6-8.

Applicationes:Fuci, motores, electronici autocineti, adjumenta majora.

Mitte ad nos inscriptio PDF

Product Detail

Applicationem

Product Tags

Communia

WSD3023DN56 est fossae summae perficiendi N-ch et P-ch MOSFETs cum densitate summa altae cellae, quae praestantissimum RDSON et portae crimen plerisque applicationibus synchronis hirci convertentis.WSD3023DN56 obviam RoHS et Viridis Productum postulationem 100% EAS cum plena functione fidelitatis probata praestari.

Features

Provectus cellulae densitatis fossae altae technologiae , Super praefectum portae inferioris , Effectum CdV/dt declinationem , 100% EAS Guarantee , Available fabrica viridis.

Applications

High Frequency Point-of-Load Synchroni Buck Converter pro MB/NB/UMPC/VGA,Networking DC-DC Power System ,CCFL Inverter lux Back-lucis, fuci, motores, electronicarum automotivarum, adjumenta majora.

numero materiae correspondentes

PANJIT PJQ5606

Magna parametri

Symbolum	Parameter	Rating		Unitates
Symbolum	Parameter	N-Ch	P-Ch	Unitates
VDS	Exhaurire-Source Voltage	30	-30	V
VGS	Porta-Source Voltage	±20	±20	V
ID	Continua Dracula Current, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Continua Dracula Current, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Pulsus Exhaurire Current Expertus, VGS(NP)=10V	48	-48	A
EAS c	Avalanche Energy , Singulus pulsus , L = 0.5mH	20	20	mJ
IAS c	Avalanche Current, Singulus pulsus , L = 0.5mH	9	-9	A
PD	Totalis potentiae dissipatio, Ta=25℃	5.25	5.25	W
TSTG	Repono Temperature Range	-55 ad 175	-55 ad 175	℃
TJ	Temperature Range Junction operating	175	175	℃
RqJA b	Scelerisque resistentia-coniunctae ad Ambientium, Stabilis publicae	60	60	/W
RqJC	Scelerisque Repugnantia adiunctae ad Casus stabilis publicae	6.25	6.25	/W

Symbolum	Parameter	Conditiones	Min.	Typ.	Maximilianus.	Unitas
BVDSS	Exhaurire-Source Naufragii Voltage	VGS=0V , ID=250uA	30	---	---	V
RDS(ON)d	Static Drain-Source de Resistentia	VGS=10V , ID=8A	---	14	18.5	mΩ
RDS(ON)d	Static Drain-Source de Resistentia	VGS=4.5V , ID=5A	---	17	25	mΩ
VGS(th)	Limen Voltage	VGS=VDS , ID = 250uA	1.3	1.8	2.3	V
IDSS	Exhaurire-Fource Leakage Current	VDS=20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Exhaurire-Fource Leakage Current	VDS=20V , VGS=0V , TJ=85℃	---	---	30	uA
IGSS	Porta-Source ultrices Current	VGS=±20V , VDS=0V	---	---	±100	nA
Rg	Porta Resistentia	VDS=0V , VGS=0V , f=1MHz	---	1.7	3.4	Ω
Qge	Totalis porta præcipe	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Porta-Source Charge		---	1.0	---
Qgde	Porta-Exhaurire præcipe		---	2.8	---
Td(on)e*	Turn-De mora Tempus	VDD=15V, RL=15R, IDS=1A, VGEN=10V, RG=6R.	---	6	---	ns
Tre	Surge Tempus		---	8.6	---
Td (off) e *	Turn-Off mora Tempus		---	16	---
Tfe	Fall Tempus		---	3.6	---
Cisse	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	545	---	pF
Cosse	Output Capacitance		---	95	---
Crsse	Reverse Transfer Capacitance		---	55	---