WSD3023DN56 N-Ch et P-Cannel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
General Description
WSD3023DN56 est fossae N-ch et P-ch MOSFETs summa cum densitate cellae altae summae, quae praestantissimum RDSON et portae crimen plerisque applicationibus synchronis hirci convertentis. WSD3023DN56 obviam RoHS et Viridis Productum postulationem 100% EAS cum plena functione firmitate probata praestari.
Features
Provectus cellulae densitatis fossae altae technologiae , Super praefectum portae inferioris , Praeclara CdV/dt effectus declinationis , 100% EAS Guarantee , Available fabrica viridis.
Applications
High Frequency Point-of-Load Synchronum Buck Converter pro MB/NB/UMPC/VGA, Networking DC-DC Power System ,CCFL Inverter-lumen, Fuci, motores, electronicarum autocinetorum, majores adjumenta.
numero materiae correspondentes
PANJIT PJQ5606
Magna parametri
| Symbolum | Parameter | Rating | Unitates | |
| N-Ch | P-Ch | |||
| VDS | Exhaurire-Source Voltage | 30 | -30 | V |
| VGS | Porta-Source Voltage | ±20 | ±20 | V |
| ID | Continua Dracula Current, VGS(NP)=10V,Ta=25℃ | 14* | -12 | A |
| Continua Dracula Current, VGS(NP)=10V,Ta=70℃ | 7.6 | -9.7 | A | |
| IDP a | Pulsus Exhaurire Current Expertus, VGS(NP)=10V | 48 | -48 | A |
| EAS c | Avalanche Energy , Singulus pulsus , L=0.5mH | 20 | 20 | mJ |
| IAS c | Avalanche Current, Singulus pulsus , L = 0.5mH | 9 | -9 | A |
| PD | Totalis potentiae dissipatio, Ta=25℃ | 5.25 | 5.25 | W |
| TSTG | Repono Temperature Range | -55 ad 175 | -55 ad 175 | ℃ |
| TJ | Temperature Range Junction operating | 175 | 175 | ℃ |
| RqJA b | Scelerisque resistentia, adiunctae ad Ambientium, Stabilis publicae | 60 | 60 | /W |
| RqJC | Scelerisque resistentia, adiunctae ad Casus, Stabilis rei publicae | 6.25 | 6.25 | /W |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON)d | Static Drain-Source de Resistentia | VGS=10V , ID=8A | --- | 14 | 18.5 | mΩ |
| VGS=4.5V , ID=5A | --- | 17 | 25 | |||
| VGS(th) | Limen Voltage | VGS=VDS , ID = 250uA | 1.3 | 1.8 | 2.3 | V |
| IDSS | Exhaurire-Fource Leakage Current | VDS=20V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=20V , VGS=0V , TJ=85℃ | --- | --- | 30 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Rg | Porta Resistentia | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | 3.4 | Ω |
| Qge | Totalis porta præcipe | VDS=15V, VGS=4.5V, IDS=8A | --- | 5.2 | --- | nC |
| Qgse | Porta-Source Charge | --- | 1.0 | --- | ||
| Qgde | Porta-Exhaurire præcipe | --- | 2.8 | --- | ||
| Td(on)e* | Turn-De mora Tempus | VDD=15V, RL=15R, IDS=1A, VGEN=10V, RG=6R. | --- | 6 | --- | ns |
| Tre | Surge Tempus | --- | 8.6 | --- | ||
| Td (off) e * | Turn-Off mora Tempus | --- | 16 | --- | ||
| Tfe | Fall Tempus | --- | 3.6 | --- | ||
| Cisse | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 545 | --- | pF |
| Cosse | Output Capacitance | --- | 95 | --- | ||
| Crsse | Reverse Transfer Capacitance | --- | 55 | --- |
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