WSD30160DN56 N-fluvium 30V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD30160DN56 MOSFET est 30V, hodierna est 120A, resistentia est 1.9mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.
WINSOK MOSFET application areas
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WINSOK MOSFET respondet aliis numeris materialibus notam
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TOSHIBA MOSFET TPH2R93PL.
PANJIT MOSFET PJQ5426.
NIKO-SEM MOSFET PKE1BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 30 | V |
| VGS | Porta-Source intentione | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS@ 10V1,7 | 120 | A |
| ID@TC= 100℃ | Continua Exhaurire Current, VGS@ 10V1,7 | 68 | A |
| IDM | Exhaurire Current Pulsed2 | 300 | A |
| EAS | Unum pulsum NIVIS Energy3 | 128 | mJ |
| IAS | NIVIS CASUS Current | 50 | A |
| PD@TC=25℃ | Totalis Power dissipatio4 | 62.5 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Ad 25℃, ID= 1mA | --- | 0.02 | --- | V/℃ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS= 10V , ID= 20A | --- | 1.9 | 2.5 | mΩ |
| VGS= 4.5V , ID= 15A | --- | 2.9 | 3.5 | |||
| VGS(th) | Limen Voltage | VGS=VDS, ID= 250uA | 1.2 | 1.7 | 2.5 | V |
| △VGS (th) | VGS (th)Temperature Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 24V , VGS= 0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS= 24V , VGS= 0V , TJ= 55℃ | --- | --- | 5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS= 5V , ID= 10A | --- | 32 | --- | S |
| Rg | Porta Resistentia | VDS= 0V , VGS= 0V , f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Totalis Porta Praecipe (4.5V) | VDS= 15V , VGS= 4.5V , ID= 20A | --- | 38 | --- | nC |
| Qgs | Porta-Source Charge | --- | 10 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 13 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= 15V , VGEN= 10V , RG=6Ω, ID=1A, RL=15Ω. | --- | 25 | --- | ns |
| Tr | Surge Tempus | --- | 23 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 95 | --- | ||
| Tf | Fall Tempus | --- | 40 | --- | ||
| Ciss | Input Capacitance | VDS= 15V , VGS= 0V , f=1MHz | --- | 4900 | --- | pF |
| Coss | Output Capacitance | --- | 1180 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 530 | --- |
