WSD30150ADN56 N - alveum 30V 145A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD30150DN56 MOSFET est 30V, hodierna est 150A, resistentia est 1.8mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.
WINSOK MOSFET application areas
E-hispanas MOSFET, wireless im- petentes MOSFET, fucos MOSFET, curas medicas MOSFET, carros MOSFET, moderatores MOSFET, productos digitales MOSFET, adjumenta parva domus MOSFET, electronicarum consumptor MOSFET.
WINSOK MOSFET respondet aliis numeris materialibus notam
AOS MOSFET AON6512, AONS3234.
Onsemi, FAIRCHILD MOSFET FDMC81DCCM.
NXP MOSFET PSMN1R7-3YL.
TOSHIBA MOSFET TPH1R43NL.
PANJIT MOSFET PJQ5428.
NIKO-SEM MOSFET PKC26BB,PKE24BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates |
| VDS | Exhaurire-Source Voltage | 30 | V |
| VGS | Porta-Source intentione | ±20 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS@ 10V1,7 | 150 | A |
| ID@TC= 100℃ | Continua Exhaurire Current, VGS@ 10V1,7 | 83 | A |
| IDM | Exhaurire Current Pulsed2 | 200 | A |
| EAS | Unum pulsum NIVIS Energy3 | 125 | mJ |
| IAS | NIVIS CASUS Current | 50 | A |
| PD@TC=25℃ | Totalis Power dissipatio4 | 62.5 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS= 0V , ID= 250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Ad 25℃, ID= 1mA | --- | 0.02 | --- | V/℃ |
| RDS(ON) | Static Drain-Source de Resistentia2 | VGS= 10V , ID= 20A | --- | 1.8 | 2.4 | mΩ |
| VGS= 4.5V , ID= 15A | 2.4 | 3.2 | ||||
| VGS(th) | Limen Voltage | VGS=VDS, ID= 250uA | 1.4 | 1.7 | 2.5 | V |
| △VGS (th) | VGS (th)Temperature Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS= 24V , VGS= 0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS= 24V , VGS= 0V , TJ= 55℃ | --- | --- | 5 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS= 0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS= 5V , ID= 10A | --- | 27 | --- | S |
| Rg | Porta Resistentia | VDS= 0V , VGS= 0V , f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Totalis Porta Praecipe (4.5V) | VDS= 15V , VGS= 4.5V , ID= 30A | --- | 26 | --- | nC |
| Qgs | Porta-Source Charge | --- | 9.5 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 11.4 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD= 15V , VGEN= 10V , RG=6Ω, ID=1A, RL=15Ω. | --- | 20 | --- | ns |
| Tr | Surge Tempus | --- | 12 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 69 | --- | ||
| Tf | Fall Tempus | --- | 29 | --- | ||
| Ciss | Input Capacitance | VDS= 15V , VGS= 0V , f=1MHz | 2560 | 3200 | 3850 | pF |
| Coss | Output Capacitance | 560 | 680 | 800 | ||
| Crss | Reverse Transfer Capacitance | 260 | 320 | 420 |
