WSD30150ADN56 N - alveum 30V 145A DFN5X6-8 WINSOK MOSFET

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WSD30150ADN56 N - alveum 30V 145A DFN5X6-8 WINSOK MOSFET

Description:

Pars NumberWSD30150ADN56

BVDSS:30V

ID:145A

RDSON:2.2mΩ 

Channel:N-cannel

sarcina:DFN5X6-8


Product Detail

Applicationem

Product Tags

WINSOK MOSFET productum overview

Voltatio WSD30150DN56 MOSFET est 30V, hodierna est 150A, resistentia est 1.8mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.

WINSOK MOSFET application areas

E-hispanas MOSFET, wireless im- petentes MOSFET, fucos MOSFET, curas medicas MOSFET, carros MOSFET, moderatores MOSFET, productos digitales MOSFET, adjumenta parva domus MOSFET, dolor electronicarum MOSFET.

WINSOK MOSFET respondet aliis numeris materialibus notam

AOS MOSFET AON6512, AONS3234.

Onsemi, FAIRCHILD MOSFET FDMC81DCCM.

NXP MOSFET PSMN1R7-3YL.

TOSHIBA MOSFET TPH1R43NL.

PANJIT MOSFET PJQ5428.

NIKO-SEM MOSFET PKC26BB,PKE24BB.

POTENS Semiconductor MOSFET PDC392X.

MOSFET parametri

Symbolum

Parameter

Rating

Unitates

VDS

Exhaurire-Source Voltage

30

V

VGS

Porta-Source intentione

±20

V

ID@TC=25

Continua Exhaurire Current, VGS@ 10V1,7

150

A

ID@TC= 100

Continua Exhaurire Current, VGS@ 10V1,7

83

A

IDM

Exhaurire Current Pulsed2

200

A

EAS

Unum pulsum NIVIS Energy3

125

mJ

IAS

NIVIS CASUS Current

50

A

PD@TC=25

Totalis Power dissipatio4

62.5

W

TSTG

Repono Temperature Range

-55 ad 150

TJ

Temperature Range Junction operating

-55 ad 150

 

Symbolum

Parameter

Conditiones

Min.

Typ.

Maximilianus.

Unitas

BVDSS

Exhaurire-Source Naufragii Voltage VGS= 0V , ID= 250uA

30

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Ad 25, EGOD= 1mA

---

0.02

---

V/

RDS(ON)

Static Drain-Source de Resistentia2 VGS= 10V , ID= 20A

---

1.8

2.4 mΩ
VGS= 4.5V , ID= 15A  

2.4

3.2

VGS(th)

Limen Voltage VGS=VDS, EGOD= 250uA

1.4

1.7

2.5

V

VGS (th)

VGS (th)Temperature Coefficient

---

-6.1

---

mV/

IDSS

Exhaurire-Fource Leakage Current VDS= 24V , VGS= 0V , TJ=25

---

---

1

uA

VDS= 24V , VGS= 0V , TJ= 55

---

---

5

IGSS

Porta-Source ultrices Current VGS=±20V , VDS= 0V

---

---

±100

nA

gfs *

Transconductance transmittere VDS= 5V , ID= 10A

---

27

---

S

Rg

Porta Resistentia VDS= 0V , VGS= 0V , f=1MHz

---

0.8

1.5

Ω

Qg

Totalis Porta Praecipe (4.5V) VDS= 15V , VGS= 4.5V , ID= 30A

---

26

---

nC

Qgs

Porta-Source Charge

---

9.5

---

Qgd

Porta-Exhaurire præcipe

---

11.4

---

Td (on)

Turn-De mora Tempus VDD= 15V , VGEN= 10V , RG=6Ω, EGOD=1A, RL=15Ω.

---

20

---

ns

Tr

Surge Tempus

---

12

---

Td (off)

Turn-Off mora Tempus

---

69

---

Tf

Fall Tempus

---

29

---

Ciss

Input Capacitance VDS= 15V , VGS= 0V , f=1MHz 2560 3200

3850

pF

Coss

Output Capacitance

560

680

800

Crss

Reverse Transfer Capacitance

260

320

420


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