WSD30140DN56 N-fluvium 30V 85A DFN5*6-8 WINSOK MOSFET

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WSD30140DN56 N-fluvium 30V 85A DFN5*6-8 WINSOK MOSFET

brevis descriptio:


  • Exemplar Number:WSD30140DN56
  • BVDSS:30V
  • RDSON:1.7mΩ
  • ID:85A
  • Channel:N-cannel
  • Sarcina:DFN5*6-8
  • Breviarium productum:Voltatio WSD30140DN56 MOSFET est 30V, vena est 85A, resistentia est 1.7mΩ, alveus est N-canale, sarcina est DFN5*6-8.
  • Applicationes:Electronic sigarella, phialas wireless, fucos, curas medicas, currus dextrarios, moderatores, productos digitales, parva adjumenta, electronicas consumptores, etc.
  • Product Detail

    Applicationem

    Product Tags

    General Description

    In WSD30140DN56 est summa effectus fossae N-canali MOSFET cum densitate altissima cellula praestantissimae RDSON et portae praefectum pro applicationibus plurimis synchronis hirci convertentis. WSD30140DN56 obsequitur cum RoHS ac viridibus productis requisitis, 100% EAS spondet, plenam functionem constantiam approbavit.

    Features

    Provectus altae cellae densitatis fossae technologiae, ultra-humilis custodia portae, CdV/dt effectus extenuationis, C% EAS spondet, viridia machinis praesto

    Applications

    Summus frequentia punctum-of-oneris synchronization, hirci conversi, DC-DC potentia systemata networked, instrumenta electrici applicationes, electronic sigarellas, wireless praecipientes, fuci, curas medicas, car- nantes, moderatores, digitales productos, parva instrumenta, electronicas consumptores

    numero materiae correspondentes

    AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314. DE NTMFS4847N. VISHAY SiRA62DP. ST STL86N3LLH6AG. INFINEON BSC050N03MSG. TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A. NXP PH2520U. TOSHIBA TPH4R803PL TPH3R203NL. ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN. PANJIT PJQ5410. AP AP3D5R0MT. NIKO PK610SA, PK510BA. POTENS PDC3803R

    Magna parametri

    Symbolum Parameter Rating Unitates
    VDS Exhaurire-Source Voltage 30 V
    VGS Porta-Source Voltage ±20 V
    ID@TC=25℃ Continua Exhaurire Current, VGS @ 10V1,7 85 A
    ID@TC=70℃ Continua Exhaurire Current, VGS @ 10V1,7 65 A
    IDM Exhaurire Pulsed Current2 300 A
    PD@TC=25℃ Totalis potentiae Dissipation4 50 W
    TSTG Repono Temperature Range -55 ad 150
    TJ Temperature Range Junction operating -55 ad 150
    Symbolum Parameter Conditiones Min. Typ. Maximilianus. Unitas
    BVDSS Exhaurire-Source Naufragii Voltage VGS=0V , ID=250uA 30 --- --- V
    BVDSS/△TJ BVDSS Temperature Coefficient Ad 25℃, ID = 1mA --- 0.02 --- V/℃
    RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=20A --- 1.7 2.4
    VGS=4.5V , ID=15A 2.5 3.3
    VGS(th) Limen Voltage VGS=VDS , ID = 250uA 1.2 1.7 2.5 V
    Exhaurire-Fource Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA
    IDSS VDS=24V , VGS=0V , TJ=55℃ --- --- 5
    IGSS Porta-Source ultrices Current VGS=±20V , VDS=0V --- --- ±100 nA
    gfs * Transconductance transmittere VDS=5V , ID=20A --- 90 --- S
    Qg Totalis Porta Praecipe (4.5V) VDS=15V , VGS=4.5V , ID=20A --- 26 --- nC
    Qgs Porta-Source Charge --- 9.5 ---
    Qgd Porta-Exhaurire præcipe --- 11.4 ---
    Td (on) Turn-De mora Tempus VDD=15V, VGEN=10V, RG=3Ω, RL=0.75Ω. --- 11 --- ns
    Tr Surge Tempus --- 6 ---
    Td (off) Turn-Off mora Tempus --- 38.5 ---
    Tf Fall Tempus --- 10 ---
    Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 3000 --- pF
    Coss Output Capacitance --- 1280 ---
    Crss Reverse Transfer Capacitance --- 160 ---

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