WSD27N10DN56 N+P-fluvium ± 100V 18A/-12A DFN5X6-8L WINSOK MOSFET

brevis descriptio:

Pars NumberWSD27N10DN56

BVDSS：±100V

ID：18A/-12A

RDSON：50mΩ

Channel：N+P-channel

sarcina：DFN5X6-8L

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Product Detail

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WINSOK MOSFET productum overview：

Voltatio WSD27N10DN56 MOSFET est ±100V, vena est 18A/-12A, resistentia est 50mΩ, alveus est N+P-alveus, sarcina DFN5X6-8L.

WINSOK MOSFET application areas

E-cigarette, patina wireless, motoria, fucus, medicinae, currus patina, moderatoris, productorum digitalium, parva adjumenta, electronicarum consumere

Magna parametri

Pars, numerus	Configurationis	Type	VDS	VGS	ID,(A)	RDS(ON)(mΩ)						RDS(ON)(mΩ)				Ciss	sarcina
			VDS	VGS	ID,(A)	@10V		@6V		@4.5V		@2.5V		@1.8V		Ciss
			(V)	±(V)	Maximilianus.	Typ.	Maximilianus.	Typ.	Maximilianus.	Typ.	Maximilianus.	Typ.	Maximilianus.	Typ.	Maximilianus.	(pF)
WSD27N10DN56	N+P	N-Ch	100	20	18	50	58	-	-	60	67	-	-	-	-	800	DFN5X6-8L
WSD27N10DN56	N+P	P-Ch	-100	20	-12	80	100	-	-	95	125	-	-	-	-	1410	DFN5X6-8L