WSD25280DN56G N-fluvium 25V 280A DFN5X6-8 WINSOK MOSFET

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WSD25280DN56G N-fluvium 25V 280A DFN5X6-8 WINSOK MOSFET

Description:

Pars NumberWSD25280DN56G

BVDSS:25V

ID:280A

RDSON:0.7mΩ 

Channel:N-cannel

sarcina:DFN5X6-8


Product Detail

Applicationem

Product Tags

WINSOK MOSFET productum overview

Voltatio WSD25280DN56G MOSFET est 25V, hodierna est 280A, resistentia est 0.7mΩ, canalis est N-alveus, sarcina DFN5X6-8 est.

WINSOK MOSFET application areas

High Frequency Point-of-Load Synchroni.Hircus Converter.Networking DC-DC Power System.Power tool Application,E-cigarettes MOSFET, incurrens MOSFET, fucos MOSFET, curas medicas MOSFET, autocinetas MOSFET, moderatores MOSFET, productos digitales MOSFET, parvas familias adjumenta MOSFET, dolor electronicos MOSFET.

WINSOK MOSFET respondet aliis numeris materialibus notam

Nxperian MOSFET PSMN1R-4ULD.

POTENS Semiconductor MOSFET PDC262X.

MOSFET parametri

Symbolum

Parameter

Rating

Unitates

VDS

Exhaurire-Source Voltage

25

V

VGS

Porta-Source intentione

±20

V

ID@TC=25

Continua Exhaurire Current.Pii Ltd.1,7

280

A

ID@TC= 70

Continua Exhaurire Current (Pii Press.1,7

190

A

IDM

Exhaurire Current Pulsed2

600

A

EAS

Unum pulsum NIVIS Energy3

1200

mJ

IAS

NIVIS CASUS Current

100

A

PD@TC=25

Totalis Power dissipatio4

83

W

TSTG

Repono Temperature Range

-55 ad 150

TJ

Temperature Range Junction operating

-55 ad 150

 

Symbolum

Parameter

Conditiones

Min.

Typ.

Maximilianus.

Unitas

BVDSS

Exhaurire-Source Naufragii Voltage VGS= 0V , ID= 250uA

25

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Ad 25, EGOD= 1mA

---

0.022

---

V/

RDS(ON)

Static Drain-Source de Resistentia2 VGS= 10V , ID= 20A

---

0.7

0.9 mΩ
VGS= 4.5V , ID= 20A

---

1.4

1.9

VGS(th)

Limen Voltage VGS=VDS, EGOD= 250uA

1.0

---

2.5

V

VGS (th)

VGS (th)Temperature Coefficient

---

-6.1

---

mV/

IDSS

Exhaurire-Fource Leakage Current VDS= 20V , VGS= 0V , TJ=25

---

---

1

uA

VDS= 20V , VGS= 0V , TJ= 55

---

---

5

IGSS

Porta-Source ultrices Current VGS=±20V , VDS= 0V

---

---

±100

nA

gfs *

Transconductance transmittere VDS= 5V , ID= 10A

---

40

---

S

Rg

Porta Resistentia VDS= 0V , VGS= 0V , f=1MHz

---

3.8

1.5

Ω

Qg

Totalis Porta Praecipe (4.5V) VDS= 15V , VGS= 4.5V , ID= 20A

---

72

---

nC

Qgs

Porta-Source Charge

---

18

---

Qgd

Porta-Exhaurire præcipe

---

24

---

Td (on)

Turn-De mora Tempus VDD= 15V , VGEN= 10V , RG=1Ω, EGOD= 10A

---

33

---

ns

Tr

Surge Tempus

---

55

---

Td (off)

Turn-Off mora Tempus

---

62

---

Tf

Fall Tempus

---

22

---

Ciss

Input Capacitance VDS= 15V , VGS= 0V , f=1MHz

---

7752

---

pF

Coss

Output Capacitance

---

1120

---

Crss

Reverse Transfer Capacitance

---

650

---

 

 


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