WSD20L120DN56 P alveum -20V -120A DFN5*6-8 WINSOK MOSFET
Communia
WSD20L120DN56 est summum faciendo P-Ch MOSFET structura cellae altae densitatis, eximium RDSON et portae praefectum pro usibus maxime synchronis convertentis hircum.WSD20L120DN56 ad C% EAS requisitis RoHS ac environmentally- amicabilibus productis occurrit, cum plenae functionis firmitate approbatione.
Features
1, Advanced alta cellula densitatis fossa technologiae
2,Super Porta Low præcipe
3, Excellent CdV/dt effectus declinationis
4, 100% EAS Guaranteed 5, Green Fabrica Available
Applications
High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-cigarette, Wireless Charger, Motors, Fuci, Medical, Car Charger, Controller, Digital Products, Parva Domus Adjumenta, Consumer Electronics.
numero materiae correspondentes
AOS AON6411, NIKO PK5A7BA
Magna parametri
| Symbolum | Parameter | Rating | Unitates | |
| 10s | Status stabilis | |||
| VDS | Exhaurire-Source Voltage | -20 | V | |
| VGS | Porta-Source Voltage | ±10 | V | |
| ID@TC=25℃ | Continua Exhaurire Current, VGS @ -10V1 | -120 | A | |
| ID@TC=100℃ | Continua Exhaurire Current, VGS @ -10V1 | -69.5 | A | |
| ID@TA=25℃ | Continua Exhaurire Current, VGS @ -10V1 | -25 | -22 | A |
| ID@TA=70℃ | Continua Exhaurire Current, VGS @ -10V1 | -24 | -18 | A |
| IDM | Exhaurire Pulsed Current2 | -340 | A | |
| EAS | Unum pulsum NIVIS Energy3 | 300 | mJ | |
| IAS | NIVIS CASUS Current | -36 | A | |
| PD@TC=25℃ | Totalis potentiae Dissipation4 | 130 | W | |
| PD@TA=25℃ | Totalis potentiae Dissipation4 | 6.8 | 6.25 | W |
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ | |
| TJ | Temperature Range Junction operating | -55 ad 150 | ℃ | |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = -1mA | --- | -0.312 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-20A | --- | 2.1 | 2.7 | mΩ |
| VGS=-2.5V , ID=-20A | --- | 2.8 | 3.7 | |||
| VGS(th) | Limen Voltage | VGS=VDS , ID = -250uA | -0.4 | -0.6 | -1.0 | V |
| △VGS (th) | VGS(th) Temperature Coefficient | --- | 4.8 | --- | mV/℃ | |
| IDSS | Exhaurire-Fource Leakage Current | VDS=-20V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-20V , VGS=0V , TJ=55℃ | --- | --- | -6 | |||
| IGSS | Porta-Source ultrices Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs * | Transconductance transmittere | VDS=-5V , ID=-20A | --- | 100 | --- | S |
| Rg | Porta Resistentia | VDS=0V , VGS=0V , f=1MHz | --- | 2 | 5 | Ω |
| Qg | Totalis portae incurrens (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-20A | --- | 100 | --- | nC |
| Qgs | Porta-Source Charge | --- | 21 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 32 | --- | ||
| Td (on) | Turn-De mora Tempus | VDD=-10V , VGEN=-4.5V , RG=3Ω ID=-1A,RL=0.5Ω | --- | 20 | --- | ns |
| Tr | Surge Tempus | --- | 50 | --- | ||
| Td (off) | Turn-Off mora Tempus | --- | 100 | --- | ||
| Tf | Fall Tempus | --- | 40 | --- | ||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | --- | 4950 | --- | pF |
| Coss | Output Capacitance | --- | 380 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 290 | --- |
