WSD20L120DN56 P alveum -20V -120A DFN5*6-8 WINSOK MOSFET

WSD20L120DN56 P-fluvium -20V -120A DFN5*6-8 WINSOK MOSFET Featured Image

brevis descriptio:

Exemplar Number:WSD20L120DN56

BVDSS:-20V

RDSON:2.1mΩ

ID:-120A

Channel:P-cannel

Sarcina:DFN5*6-8

Breviarium productum:MOSFET WSD20L120DN56 agit in voltis -20 et trahit curriculum -120 amps. Resistentiam 2.1 milliomm, P-alvei habet, et in sarcina DFN5*6-8 venit.

Applicationes:E-cigarettes, phialas wireless, motores, fuci, instrumenta medica, phialas currus, moderatores, machinas digitales, adjumenta parva, et electronicas consumptores.

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General Description

WSD20L120DN56 est summa operans P-Ch MOSFET structura cellae altae densitatis, eximium RDSON et portae praefectum pro usibus maxime synchronis convertentis hircum. WSD20L120DN56 ad C% EAS requisitis RoHS ac environmentally- amicabilibus productis occurrit, cum plenae functionis firmitate approbatione.

Features

1, Advanced alta cellula densitatis fossa technologiae
2,Super Porta Low præcipe
3, Excellent CdV/dt effectus declinationis
4, 100% EAS Guaranteed 5, Green Fabrica Available

Applications

High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-cigarette, Wireless Charger, Motors, Fuci, Medical, Car Charger, Controller, Digital Products, Parva Domus Adjumenta, Consumer Electronics.

numero materiae correspondentes

AOS AON6411, NIKO PK5A7BA

Magna parametri

Symbolum	Parameter	Rating		Unitates
Symbolum	Parameter	10s	Stabilis publica	Unitates
VDS	Exhaurire-Source Voltage	-20		V
VGS	Porta-Source Voltage	±10		V
ID@TC=25℃	Continua Exhaurire Current, VGS @ -10V1	-120		A
ID@TC=100℃	Continua Exhaurire Current, VGS @ -10V1	-69.5		A
ID@TA=25℃	Continua Exhaurire Current, VGS @ -10V1	-25	-22	A
ID@TA=70℃	Continua Exhaurire Current, VGS @ -10V1	-24	-18	A
IDM	Exhaurire Pulsed Current2	-340		A
EAS	Unum pulsum NIVIS Energy3	300		mJ
IAS	NIVIS CASUS Current	-36		A
PD@TC=25℃	Totalis potentiae Dissipation4	130		W
PD@TA=25℃	Totalis potentiae Dissipation4	6.8	6.25	W
TSTG	Repono Temperature Range	-55 ad 150		℃
TJ	Temperature Range Junction operating	-55 ad 150		℃

Symbolum	Parameter	Conditiones	Min.	Typ.	Maximilianus.	Unitas
BVDSS	Exhaurire-Source Naufragii Voltage	VGS=0V , ID=-250uA	-20	---	---	V
BVDSS/△TJ	BVDSS Temperature Coefficient	Ad 25℃, ID = -1mA	---	-0.312	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-20A	---	2.1	2.7	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-2.5V , ID=-20A	---	2.8	3.7
VGS(th)	Limen Voltage	VGS=VDS , ID = -250uA	-0.4	-0.6	-1.0	V
		VGS=VDS , ID = -250uA
VGS (th)	VGS(th) Temperature Coefficient		---	4.8	---	mV/℃
IDSS	Exhaurire-Fource Leakage Current	VDS=-20V , VGS=0V , TJ=25℃	---	---	-1	uA
IDSS	Exhaurire-Fource Leakage Current					uA
		VDS=-20V , VGS=0V , TJ=55℃	---	---	-6
IGSS	Porta-Source ultrices Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs *	Transconductance transmittere	VDS=-5V , ID=-20A	---	100	---	S
Rg	Porta Resistentia	VDS=0V , VGS=0V , f=1MHz	---	2	5	Ω
Qg	Totalis portae incurrens (-4.5V)	VDS=-10V , VGS=-4.5V , ID=-20A	---	100	---	nC
Qgs	Porta-Source Charge		---	21	---
Qgd	Porta-Exhaurire præcipe		---	32	---
Td (on)	Turn-De mora Tempus	VDD=-10V , VGEN=-4.5V , RG=3Ω ID=-1A,RL=0.5Ω	---	20	---	ns
Tr	Surge Tempus		---	50	---
Td (off)	Turn-Off mora Tempus		---	100	---
Tf	Fall Tempus		---	40	---
Ciss	Input Capacitance	VDS=-10V , VGS=0V , f=1MHz	---	4950	---	pF
Coss	Output Capacitance		---	380	---
Crss	Reverse Transfer Capacitance		---	290	---