WSD2090DN56 N-fluvium 20V 80A DFN5*6-8 WINSOK MOSFET
Communia
WSD2090DN56 est fossa summa perficiendi N-Ch MOSFET summa cum densitate cellularum altarum, quae praestantissimum RDSON et portae crimen plerisque applicationibus synchronis hirci convertentis.WSD2090DN56 obviam RoHS et Viridis Productum postulationem 100% EAS cum plena functione certa probata praestatur.
Features
Provectus cellula alta densitas fossae technologiae, Super portae inferioris praecipe , Praeclara CdV / dt effectus declinationis , 100% EAS Guarantee, Praesto Praesto Viridis Fabrica.
Applications
Commutatio, Ratio Power, Load Switch, electronic sigarella, fuci, instrumenta electrica, fascia tormenta, PD, adjumenta domestica parva, etc.
numero materiae correspondentes
AOS AON6572
Magna parametri
Maximum Ratings (TC = XXV, nisi aliter notetur)
| Symbolum | Parameter | Maximilianus. | Unitates |
| VDSS | Exhaurire-Source Voltage | 20 | V |
| VGSS | Porta-Source Voltage | ±12 | V |
| ID@TC=25℃ | Continua Exhaurire Current, VGS @ 10V1 | 80 | A |
| ID@TC=100℃ | Continua Exhaurire Current, VGS @ 10V1 | 59 | A |
| IDM | Pulsus Exhaurire Current note1 | 360 | A |
| EAS | Una Pulsed NIVIS Energy note2 | 110 | mJ |
| PD | Potentia dissipatio | 81 | W |
| RθJA | Scelerisque resistentia, adiunctae ad Case | 65 | /W |
| RθJC | Scelerisque resistentia adiunctae-Case 1 | 4 | /W |
| TJ, TSTG | Operating et Repono Temperature Range | -55 ad + 175 | ℃ |
Characteres electrici (TJ=25 , nisi aliud notentur)
| Symbolum | Parameter | Conditiones | Min | Typ | Max | Unitates |
| BVDSS | Exhaurire-Source Naufragii Voltage | VGS=0V, ID=250μA | 20 | 24 | --- | V |
| BVDSS/△TJ | BVDSS Temperature Coefficient | Ad 25℃, ID = 1mA | --- | 0.018 | --- | V/℃ |
| VGS(th) | Limen Voltage | VDS= VGS, ID=250μA | 0.50 | 0.65 | 1.0 | V |
| RDS(ON) | Static Drain-Source de Resistentia | VGS=4.5V, ID=30A | --- | 2.8 | 4.0 | mΩ |
| RDS(ON) | Static Drain-Source de Resistentia | VGS=2.5V, ID=20A | --- | 4.0 | 6.0 | |
| IDSS | Nulla porta Voltage Exhaurire Current | VDS=20V,VGS=0V | --- | --- | 1 | μA |
| IGSS | Porta-Corpus lacus Current | VGS=±10V, VDS=0V | --- | --- | ±100 | nA |
| Ciss | Input Capacitance | VDS=10V,VGS=0V,f=1MHZ | --- | 3200 | --- | pF |
| Coss | Output Capacitance | --- | 460 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 446 | --- | ||
| Qg | Totalis porta præcipe | VGS=4.5V,VDS=10V,ID=30A | --- | 11.05 | --- | nC |
| Qgs | Porta-Source Charge | --- | 1.73 | --- | ||
| Qgd | Porta-Exhaurire præcipe | --- | 3.1 | --- | ||
| tD (on) | Turn-in mora Tempus | VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω | --- | 9.7 | --- | ns |
| tr | Turn, in Surge Tempus | --- | 37 | --- | ||
| tD (off) | Turn-off Mora Tempus | --- | 63 | --- | ||
| tf | Turn-off lapsum Tempus | --- | 52 | --- | ||
| VSD | Diode Deinceps intentione | IS=7.6A,VGS=0V | --- | --- | 1.2 | V |
Epistulam tuam hic scribe et mitte nobis
