WSD100N06GDN56 N-fluvium 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET productum overview
Voltatio WSD100N06GDN56 MOSFET est 60V, current est 100A, resistentia est 3mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.
WINSOK MOSFET application areas
Potestas medicas MOSFET, PDs MOSFET, fuci MOSFET, electronic sigarella MOSFET, adjumenta majora MOSFET, et instrumenta potentia MOSFET.
WINSOK MOSFET respondet aliis numeris materialibus notam
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSFET PDC692X.
MOSFET parametri
| Symbolum | Parameter | Rating | Unitates | ||
| VDS | Exhaurire-Source Voltage | 60 | V | ||
| VGS | Porta-Source Voltage | ±20 | V | ||
| ID1,6 | Continua Exhaurire Current | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Exhaurire Current Pulsed | TC=25°C | 240 | A | |
| PD | Maximam potestatem dissipatio | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche Current, Single pulsus | 45 | A | ||
| EAS3 | Unum pulsum NIVIS Energy | 101 | mJ | ||
| TJ | Maximum adiunctionis Temperature | 150 | ℃ | ||
| TSTG | Repono Temperature Range | -55 ad 150 | ℃ | ||
| RθJA1 | Scelerisque resistentia adiunctae ad ambientium | Status stabilis | 55 | ℃/W | |
| RθJC1 | Scelerisque resistentia adiunctae ad Case | Status stabilis | 1.5 | ℃/W | |
| Symbolum | Parameter | Conditiones | Min. | Typ. | Maximilianus. | Unitas | |
| Static | |||||||
| V(BR)DSS | Exhaurire-Source Naufragii Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Nulla porta Voltage Exhaurire Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ= 85°C | 30 | ||||||
| IGSS | Porta ultrices Current | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| De Characteribus | |||||||
| VGS(TH) | Limen Voltage | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS (on)2 | Exhaurire Source De-statu resistentia | VGS = 10V, ID = 20A . | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Switching | |||||||
| Qg | Totalis porta præcipe | VDS=30V VGS=10V ID=20A | 58 | nC | |||
| Qgs | Porta-Sour Crimen | 16 | nC | ||||
| Qgd | Porta-Exhaurire præcipe | 4.0 | nC | ||||
| td (on) | Turn-in mora Tempus | VGEN=10V VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Turn, in Surge Tempus | 8 | ns | ||||
| td (off) | Turn-off Mora Tempus | 50 | ns | ||||
| tf | Turn-off Fall Tempus | 11 | ns | ||||
| Rg | Gai resistentia | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Dynamic | |||||||
| Ciss | In Capacitance | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Ex Capacitance | 1522 | pF | ||||
| Crss | Reverse Transfer Capacitance | 22 | pF | ||||
| Exhaurire Source Diode Characteres et Maximum Ratings | |||||||
| IS1,5 | Continua Source Current | VG=VD=0V , Force Current | 55 | A | |||
| ISM | Pulsed Source Current3 | 240 | A | ||||
| VSD2 | Diode Deinceps intentione | ISD = 1A , VGS=0V | 0.8 | 1.3 | V | ||
| trr* | Tempus inversa Recuperatio | ISD= 20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Inversa Recuperatio præcipe | 33 | nC | ||||
