Nxperian PSMN1R-4ULD POTENS PDC262X N alveum DFN5X6-8 MOSFETs

brevis descriptio:

Pars NumberPSMN1R-4ULD PDC262X

Channel：N-cannel

sarcina：DFN5X6-8

Mitte ad nos inscriptio PDF

Product Detail

Applicationem

Product Tags

MOSFET productum overview

Nxperian MOSFET PSMN1R-4ULD.

POTENS Semiconductor MOSFET PDC262X.

numero materiae correspondentes

Voltatio BVDSS de WINSOK WSD25280DN56G FET est 25V, hodierna est 280A, resistentia est 0.7mΩ, alveus est N-alveus, sarcina DFN5X6-8 est.

MOSFET applicationem agri

High Frequency Point-of-Load Synchronous、Buck Converter、Networking DC-DC Power System、Power, Instrumentum Applicationis, E-cigarettes MOSFET, wireless praecipientes MOSFET, fucos MOSFET, curas medicas MOSFET, carras MOSFET, moderatores MOSFET, productos digitales MOSFET, parva adjumenta domus MOSFET, dolor eu nisl MOSFET.

Priora: N-DFN5X6-8 MOSFETs

Next: Nxperian PSMNR9-3ULD POTENS MOSFET PMC4998X N alveum DFN5X6-8

Epistulam tuam hic scribe et mitte nobis