Subitis autocineti initium potentiae copia industriae in stadio celeris evolutionis est praesens. Cum numerus carrorum augetur, postulatio portatilis, subitis potentia commeatus efficiens oriri pergit. In posterum, technologiarum incremento, haec machinae magis intelligentes et multifunctiones fient, et mercatus potentia ingens est et expectatur crescere.
In autocineto subitis initium potentiae supplementum applicationes, principales quaestiones obversaeMOSFETs includunt scelerisque administratione provocationes, consilia pacta requisita, firmitatem ac constantiam considerationes et sumptus temperantiae. Hae factores concursum MOSFET mercatum ac mercatum coniunctim afficiunt, et momenti momenti habent in eius applicatione et effectu in subitis copiis commeatus.
WINSOK MOSFET fistulae in subitis autocinetis ad commeatus potentiae inchoationis adhibiti sunt. Praecipua applicationis exempla sunt:
| Pars numerus | Configurationis | Type | VDS | ID (A) | VGS(v). | RDS(ON)(mΩ) | Ciss | sarcina | |||
| @10V | |||||||||||
| (V) | Maximilianus. | Min. | Typ. | Maximilianus. | Typ. | Maximilianus. | (pF) | ||||
| Unius | N-Ch | 75 | 100 | 2 | 3 | 4 | 5.3 | 6.4 | 3500 | DFN5X6-8 | |
| Unius | N-Ch | 100 | 4.5 | 1.5 | 2 | 2.5 | 85 | 105 | 940 | SOP-8 | |
| Dual | N-Ch | 60 | 6.5 | 1 | 2 | 3 | 43 | 52 | 870 | SOP-8 | |
| Unius | P-Ch | -30 | -13 | -1.2 | -2 | -2.5 | 9.6 | 15 | 1550 | SOP-8 | |
| Unius | N-Ch | 30 | 85 | 1 | 1.5 | 2.5 | 4.5 | 5.5 | 2295 | TO-252 | |
| Unius | N-Ch | 100 | 70 | 2 | 3 | 4 | 10 | 16 | 4100 | TO-252 | |
| Unius | P-Ch | -30 | -65 | -1 | -1.6 | -2.5 | 7.5 | 9.5 | 3448 | TO-252 | |
| Unius | N-Ch | 40 | 220 | 2 | 3 | 4 | 2.5 | 3.2 | 5710 | TO-263 | |
Aliae notae materiales numeri respondentibus supradictisWINSOK MOSFETsunt:
Numeri materiales respondentes WINSOK MOSFET WSD75100DN56 sunt: AOS AON6276, AON6278,AON6280,AON6282,AON6448.Onsemi, FAIRCHILD NVMFS6H824N.STMicroelectronics STL100N8F7.INFINEON,IR BSC042NE7NS3G,BSC.
Numeri materiales respondentes WINSOK MOSFET WSP06N10 sunt: AOS AO4286, AO4486, AO4892. Onsemi, FAIRCHILD FDS3692. VISHAY Si4590DY.PANJIT PJL9450A .Sinopower SM1A23NSK,SM1A24NSK,SM1A30NSK. NIKO-PoSEMPt 6930; DTM6940.
Numeri materiales respondentes WINSOK MOSFET WSP6946 sunt: AOS AO4828, AOSD62666E, AOSD6810. Onsemi, FAIRCHILD FDS5351.VISHAY Si4946CDY.PANJIT PJL9836A.Potens semiconductor PDS6810.DINTEK ELECTRONICS DTM4946.
Numeri materiales respondentes WINSOK MOSFET WSP4407 sunt: AOS AO4407, AO4407A, AOSP21321, AOSP21307. Onsemi, FAIRCHILD FDS6673BZ.VISHAY Si4825DDY.STMicroelectronics STS10P3LLH6,STS5P3LLH6,SPSITTS6P3LLH615. Sinopower SM4305PSK.NIKO-SEM PV507BA, P1003EVG.Potens Semiconductor PDS4903.DINTEK ELECTRONICS DTM4407, DTM4415, DTM4417.
Numeri materiales respondentes WINSOK MOSFET WSF3085 sunt: AOS AOD4132, AOD508, AOD518. Onsemi, FAIRCHILD FDD050N03B.STMicroelectronics STD100N3LF3.INFINEON,IR IPD031N03LG,IPD040N03LG.PANJIT PJD85N03B.S.P.S.P.M.P.D.P.D. 3906.DINTEK ELECTRONICS DTU50N03 .
Numeri materiales respondentes WINSOK MOSFET WSF70N10 sunt: AOS AOD296A.STMicroelectronics STD15NF10T4.INFINEON,IR IPD12CN10NG.TOSHIBA TK7R7P10PL.PANJIT PJD70N10.NIKO-SEM P0810BDA.Potens Semiconductor PDD0978.
De numeris materialibus respondentibus WINSOKMOSFETWSF70P03 sunt: AOS AOD21357, AOD403, AOD423. Onsemi, FAIRCHILD NVATS4A103PZ.VISHAY SUD50P04.STMicroelectronics STD37P3H6AG, STD40P3LLH6.TOSHIBA TJ60S04M3L.PANJIT PJD07P03,-P. PD537BA.Potens Semiconductor PDD3959.
De numero materiae correspondentesWINSOKMOSFET WSK220N04 sunt: AOS AOB1404L,AOB2140L,AOB2144L.Onsemi,FAIRCHILD FDB8443.STMicroelectronics STB55NF06L.Potens semiconductor PDH4970.
Post tempus: Nov-17-2023
