Ripae potentiae portatiles (ac phialas portatiles notae) late pro variis electronicis machinis usi sunt.Cum incrementis in technologia altilium, potentiae futurae riparum expectantur leviores esse, facultatem altiorem habent, et velociores velocitates offerunt.Captiosus lineamenta et multifunctionalitas etiam clavis evolutionis areae occurrent ut solutiones energiae mobilis postulatio crescens occurrat.
MOSFETs in ripis potentiae portatilis (faciles portatiles) provocationes faciei in efficientia et durabilitate.Res clavium includunt damnum potentiae, administrationis caloris insufficiens, et commendatio curas sub oneribus altis, quae limitant ad effectum et vitam potentiae bank.usingWINSOKMOSFET ut supra problemata solvenda adiuvare possit.
WINSOK mediae et infimae intentionis MOSFET applicationes in rebus mobilibus adhibitis, praecipuorum applicationis exempla:
| Pars numerus | Configurationis | Type | VDS | ID (A) | VGS(v). | RDS(ON)(mΩ) | Ciss | sarcina | |||
| @10V | |||||||||||
| (V) | Maximilianus. | Min. | Typ. | Maximilianus. | Typ. | Maximilianus. | (pF) | ||||
| Unius | N-Ch | 30 | 5.6 | 0.5 | 0.8 | 1 | - | - | 525 | SOT-23N | |
| Unius | N-Ch | 20 | 5.9 | 0.3 | 0.5 | 1.2 | - | - | 395 | SOT-2-3L | |
| Unius | N-Ch | 30 | 5.5 | 1 | 1.4 | 2 | 26 | 32 | 391 | SOT-2-3L | |
| Unius | P-Ch | -20 | -7.1 | -0.5 | -0.5 | -1 | - | - | 2000 | SOT-2-3L | |
| Unius | P-Ch | -30 | -5.1 | -0.7 | -1 | -1.3 | - | 43 | 826 | SOT-2-3L | |
| Unius | P-Ch | -30 | -120 | -1.2 | -1.5 | -2.5 | 2.9 | 3.6 | 6100 | DFN5X6-8 | |
| Unius | N-Ch | 30 | 12 | 1.2 | 1.9 | 2.5 | 9.5 | 12 | 770 | SOP-8 | |
| Dual+ESD | N-Ch | 20 | 7.2 | 0.5 | 0.7 | 1.2 | - | - | 615 | SOP-8 | |
| Dual+ESD | N-Ch | 20 | 7.5 | 0.5 | 0.7 | 1.1 | - | - | 620 | SOP-8 | |
| Unius | P-Ch | -30 | -8.2 | -1.5 | -2 | -2.5 | 16 | 20 | 2050 | SOP-8 | |
| Unius | P-Ch | -30 | -13 | -1.2 | -2 | -2.5 | 9.6 | 15 | 1550 | SOP-8 | |
| Dual | P-Ch | -20 | -5.8 | -0.6 | -1.1 | -1.7 | 40 | 65 | 625 | SOP-8 | |
| N+P | N-Ch | 30 | 7 | 1 | 1.5 | 2.5 | 18 | 28 | 550 | SOP-8 | |
| P-Ch | -30 | -6 | -1 | -1.5 | -2.5 | 30 | 38 | 645 | |||
| Unius | P-Ch | -30 | -65 | -1 | -1.6 | -2.5 | 7.5 | 9.5 | 3448 | TO-252 | |
Aliae notae materiales numeri respondentibus superioribus WINSOK MOSFET sunt:
Numeri materiales respondentes WINSOK MOSFET WST3400S sunt: AOS AO3400, AO3400A, AO3404.VISHAY Si2374DS.TOSHIBA SSM3K345R.Diodes Incorporatus ZXMN3A04DN8,ZXMC3A18DN8,DMC3032LSD,DMC3016LSD.Sino potentia SM23146LSD.Potens Sm23146LSD.Potens Sm23143A04DN8, ZXMC3A18DN8,DMC3032LSD,DMC3016LSD.Sino potentia SM2314D.
Numeri materiales respondentes WINSOK MOSFET WST2316 sunt: AOS AO3420. Potens Semiconductor PDN2318S.
Numeri materiales respondentes WINSOK MOSFET WST3408 sunt: AOS AO3404, AO3404A, AO3406, AO3454, AO3456. Onsemi, FAIRCHILD FDN537N.VISHAY Si2366DS,Si2336DS.STMicroelectronics STR2N2VH5.NXPERIAN PMV25ENEA3340433, RJ AJ3K3K3A30433, RJ AJ3K3K3A3POSSHIBA JJ3K3K3K3POSSHIBA JJ3K3K3 . 04A.APEC AP2316GN, AP2326GN.Diodes Incorporatus ZXMN3F30FH.Sinopower SM2308NSA,SM2304NSA.NIKO-SEM P3203CMG.Potens Semiconductor PDN3612S.
Numeri materiales respondentes WINSOK MOSFET WST2339 hi sunt: AOS AO3413, AO3415A, AO3415A, AO3419, AO3423, AO3435, AO3493, AO3495, AO3499, AO21115C.VISHAY Si2399DS.TOSHIBA SSM3J355R.Sinopotes S.M2335PSA.PotensS.
Numeri materiales respondentes WINSOK MOSFET WST3409 sunt: AOS AO3401, AO3401A, AO3453, AO3459.VISHAY Si2343CDS.TOSHIBA SSM3J332R,SSM3J372R.Sinopower SM2315PSA.NIKO-SEM P5103EMG.Potens Semiconductor PDN2309S.
Numeri materiales respondentes WINSOK MOSFET WSD30L120DN56 sunt: AOS AON6403,AON6407,AON6411.PANJIT PJQ5427.Potens Semiconductor PDC3901X.
Numeri materiales respondentes WINSOK MOSFET WSP4406 sunt: AOS AO4406A, AO4306, AO4404B, AO4466, AO4566. Onsemi, FAIRCHILD NTMS4801N.VISHAY Si4178DY.STMicroelectronics STS11NF30L.INFINEON, IR BSO110N03MS G.TOSHIBA .P.P.N.J.S.P.N.J.S.J. , .NIKO-SEM PV548BA,P1203BVA,P0903BVA.Potens Semiconductor PDS3908.
Numeri materiales respondentes WINSOK MOSFET WSP9926 sunt: AOS AO9926B, AO9926C.Onsemi, FAIRCHILD FDS6890A,FDS6892A,FDS6911.VISHAY Si9926CDY.Potens Semiconductor PDS3808.
Numeri materiales respondentes WINSOK MOSFET WSP9926A sunt: AOS AO9926B, AO9926C.Onsemi,FAIRCHILD FDS6890A,FDS6892A,FDS6911.VISHAY Si9926CDY.INFINEON,IR BSO330N02K G.Sinopower SM9926DSK.Potens Semiconductor PDS3810.
Numeri materiales respondentes WINSOK MOSFET WSP4435 hi sunt: AOS AO4335, AO4403, AO4405, AO4411, AO4419, AO4435, AO4449, AO4459, AO4803, AO4803A, AO4807, AO4813.Onsemi, FAIRCHILD FDS4465BZ,FDS6685. VISHAY Si4431, CP3LLH6 electronico STS6P3LLH6,STS9P3LLH6.TOSHIBA TPC8089-H.PANJIT PJL9411.Sinopower SM4310PSK.NIKO-SEM P3203EVG.Potens Semiconductor PDS3907.
Numeri materiales respondentes WINSOK MOSFET WSP4407 sunt: AOS AO4407,4407A, AOSP21321, AOSP21307. Onsemi, FAIRCHILD FDS6673BZ.VISHAY Si4825DDY.STMicroelectronics STS10P3LLH6,STS5P3LLH6,STS6P3LL3ll6. potestas SM4305PSK.NIKO-SEM PV507BA; P1003EVG.Potens Semiconductor PDS4903.
Numeri materiales respondentes WINSOK MOSFET WSP4953A hi sunt: AOS AO4801, AO4801A, AO4803, AO4803A.Onsemi, FAIRCHIS NTMS5P02.VISHAY Si9933CDY.STMicroelectronics STS4DPF20L.TOSHIBA TPC8129. ROHM QH8JA1.PANJIT P3P02.VISHAY Si9933CDY.STMicroelectronics STS4DPF20L.TOSHIBA TPC8129.ROHM QH8JA1.PANJIT P3P02.VISHAY Si9933CDY.S. A16N8.NIKO- SEM PV521BA.
Numeri materiales respondentes WINSOK MOSFET WSP4606 sunt: AOS AO4606, AO4630.
AOS AO4620, AO4924, AO4627, AO4629, AO4616. Onsemi, FAIRCHILD ECH8661,FDS8958A.VISHAY Si4554DY.PANJIT PJL9606.PANJIT PJL9602.Sinopower SM4901CSK.NIKO-SEM P5003QVG.Potens Semiconductor PDS3710.
Numeri materiales respondentes WINSOK MOSFET WSF70P03 sunt: AOS AOD21357, AOD403, AOD423. Onsemi, FAIRCHILD NVATS4A103PZ.VISHAY SUD50P04.STMicroelectronics STD37P3H6AG,STD40P3LLH6.TOSHIBA TJP60S04M.P.P.B.P.P.J.P.J.P.J.P.P.J.P.J.J.P.S. NIKO-SEM PZ0703ED,PD537BA.Potens Semiconductor PDD3959.
Post tempus: Nov-24-2023
