In statu, 3D typographi (additio fabrica fabricandi) celeriter evolvuntur, late in fabricandis, medicis, et in campis scholasticis adhibitae. In posterum, celerioribus celeritatibus typographicis et materiae varietate maiore, 3D exspectatur typographica magis variata et divulgata fieri, praesertim in productione et multiplici structura fabricando.
In 3D impressoribus (additivae machinas fabricandi), MOSFETs utens maxime faciem provocat ad calorem dissipationis, praesertim in magna celeritate, diuturnitate typographica. Accedit,MOSFETs Sensibilia sunt intentione ambigua, quae subtilitatem imprimendi afficere possunt. Sumptus et magnitudo sunt etiam considerationes in consilio et sustentatione.UsingWINSOKMOSFET ut supra problemata solvenda adiuvare possit.
Applicatio WINSOK MOSFET in 3D impressoribus, applicationis principalis exempla:
| Pars numerus | Configurationis | Type | VDS | ID (A) | VGS(v). | RDS(ON)(mΩ) | Ciss | sarcina | |||
| @10V | |||||||||||
| (V) | Maximilianus. | Min. | Typ. | Maximilianus. | Typ. | Maximilianus. | (pF) | ||||
| Unius | N-Ch | 30 | 7 | 0.5 | 0.8 | 1.2 | - | - | 572 | SOT-2-3L | |
| Unius | N-Ch | 30 | 100 | 1.5 | 1.8 | 2.5 | 3.3 | 4 | 1350 | DFN5X6-8 | |
| Unius | N-Ch | 30 | 43 | 1.2 | 1.5 | 2.5 | 10 | 12 | 940 | TO-252 | |
| Unius | N-Ch | 30 | 85 | 1 | 1.5 | 2.5 | 4.5 | 5.5 | 2295 | TO-252 | |
| Unius | N-Ch | 30 | 160 | 1.5 | 1.9 | 2.5 | 2.3 | 3 | 2450 | TO-252 | |
| Unius | N-Ch | 60 | 50 | 1.2 | 1.8 | 2.5 | 20 | 23 | 1680 | TO-252 | |
| Unius | N-Ch | 60 | 60 | 1 | 1.8 | 3 | 10 | 12 | 1896 | TO-252 | |
| Unius | N-Ch | 40 | 180 | 2 | 3 | 4 | 3 | 3.6 | 4426 | TO-263 | |
| Unius | N-Ch | 40 | 220 | 2 | 3 | 4 | 2.5 | 3.2 | 5710 | TO-263 | |
Aliae notae materiales numeri respondentibus superioribus WINSOK MOSFET sunt:
Numeri materiales respondentes WINSOK MOSFET WST3400 sunt: WST3400AOS AO3400, AO3400A, AO3404. Onsemi, FAIRCHILD FDN537N.NIKO-SEM P3203CMG.Potens Semiconductor PDN3912S.DINTEK ELECTRONICA DTS3406.
Numeri materiales respondentes Winsok MOSFET WSD30100DN56 sunt: WSD30100DN56AOS AON6354,AON6572,AON6314,AON6502,AON6510.Onsemi, FAIRCHIS NTMFS4946N.VISHAY SiRA60DP,SiDR390DP,SiRA80DP,STMl5H electronicsL3LL3L3L5, ST ,IR BSC014N03LSG,BSC016N03LSG,BSC014N03MSG,BSC016N03MSG .NXP NXPPSMN7R0-30YL.PANJIT PJQ5424.NIKO-SEM PK698SA.Potens Semiconductor PDC3960X.
Numeri materiales respondentes WINSOK MOSFET WSF3040 sunt: WSF3040AOS AOD32326, AOD418, AOD514, AOD516, AOD536, AOD558. Onsemi, FAIRCHIS FDD6296.STMicroelectronics STD40NF3LL.INFINEON,IR IPD090N03LG.MOSHIBA PAC453LG.TOSHIBA PBX4531P ,SM3119NAU.NIKO-SEM PD600BA.Potens semiconductor PDD3910.DINTEK ELECTRONICS DTU40N03.
Numeri materiales respondentes WINSOK MOSFET WSF3085 sunt: WSF3085AOS AOD4132, AOD508, AOD518. Onsemi, FAIRCHILD FDD050N03B.STMicroelectronics STD100N3LF3.INFINEON,IR IPD031N03LG,IPD040N03LG.PANJIT.PoSin conductor PDD3906.DINTEK ELECTRONICS DTU50N03 .
Numeri materiales respondentes WINSOK MOSFET WSF30160 sunt: WSF30160Onsemi,FAIRCHILD FDD8870.INFINEON,IR IRLR7843.
Numeri materiales respondentes WINSOK MOSFET WSF40N06 sunt: WSF40N06AOS AOD2606, AOD2610E,AOD442G,AOD66620.Onsemi, FAIRCHILD FDD10AN06A0.VISHAY SUD50N06-09L.STMicroelectronics STD20NF06LAG.INFINEON, IR JK LG.INFINEON, IR J.J.J.P.D.M D45N06A.Sinopower SM6019NSU.Potens Semiconductor PDD6904. DINTEK ELECTRONI DTU50N06.
Numeri materiales respondentes WINSOK MOSFET WSF60N06 sunt: WSF60N06AOS AOD2606, AOD2610E,AOD442G,AOD66620.STMicroelectronics STD20NF06LAG, STD20NF06LAG.INFINEON, IR IR60N06.TOSHIBA TK60S06K3L.P.N.T.T 55N06.
Numeri materiales respondentes WINSOK MOSFET WSK180N04 sunt:WSK180N04AOS AOB1404L,AOB2140L,AOB2144L.STMicroelectronics STH160N4LF6-2.Nxperian PSMN1R1-40BS.Texas Instrumentorum CSD18511KTT. Potens semiconductor PDH4960.
Numeri materiales respondentes WINSOK MOSFET WSK220N04 sunt:WSK220N04AOS AOB1404L,AOB2140L,AOB2144L.Onsemi,FAIRCHILD FDB8443.STMicroelectronics STB55NF06L.Potens semiconductor PDH4970.
Post tempus: Dec-01-2023
